Zobrazeno 1 - 10
of 48
pro vyhledávání: '"I. P. Storozhenko"'
Autor:
I. P. Storozhenko, S. I. Sanin
Publikováno v:
Radio Physics and Radio Astronomy, Vol 27, Iss 4, Pp 289-298 (2022)
Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ gra
Externí odkaz:
https://doaj.org/article/f24f071e1c48449496a2d1ef638635ac
Autor:
I. P. Storozhenko, М. V. Kaydash
Publikováno v:
Радиофизика и электроника, Vol 21, Iss 3, Pp 52-57 (2016)
Gunn diodes are the active elements for generating electromagnetic waves in the millimeter range. An urgent task of today is to increase their cutoff frequency and output power. One of the ways to do it is to use graded-gap semiconductors. The paper
Externí odkaz:
https://doaj.org/article/6ef7fb5f8c064de8b258c58841205021
Autor:
I. P. Storozhenko
Publikováno v:
Радиофизика и электроника, Vol 20, Iss 3, Pp 90-95 (2015)
The use of variband semiconductors in uniformly doped devices with the effect of intervalley electron transfer can lead to the appearance of a static electric domain. The interest in the static domain is due to the possibility of creating a local ele
Externí odkaz:
https://doaj.org/article/93e7960eb805430c81434493a6bc0429
Autor:
H. O. Yeromina, N. V. Sheykina, M. V. Krasovska, Z. G. Ieromina, I. V. Krasovskyi, L. O. Perekhoda, I. P. Storozhenko
Publikováno v:
Biopolymers and Cell. 35:467-475
Autor:
I. P. Storozhenko
Publikováno v:
2021 IEEE 2nd KhPI Week on Advanced Technology (KhPIWeek).
The power spectrums of oscillations of 1 μm-length Gunn diodes based on gradual graded-gap GaInPAs alloy are assessed by means of hydrodynamic simulations calibrated against Monte Carlo simulation data. In the paper is presented the results of the i
Autor:
I. P. Storozhenko, M. V. Kaydash
Publikováno v:
2020 IEEE Ukrainian Microwave Week (UkrMW).
The power spectrums of oscillations of 1 μm-thick Gunn diodes based on graded III-nitrides are assessed by means of hydrodynamic simulations calibrated against Monte Carlo simulation data. The simulation results predict superior performance of diode
Autor:
L. O. Perekhoda, N. V. Sheykina, M. V. Krasovska, I. V. Krasovskyi, H. O. Yeromina, S. A. Demchenko, I. P. Storozhenko
Publikováno v:
Journal of Organic and Pharmaceutical Chemistry. 15:58-63
An important step in creation of potential drugs is to confirm the structure of the compounds synthesized. This requires the use of modern physical and physico-chemical methods of research. Nowadays a promising scientific direction for searching biol
Autor:
I. P. Storozhenko, M. V. Kaydash
Publikováno v:
Telecommunications and Radio Engineering. 75:1495-1504
Autor:
I. P. Storozhenko
Publikováno v:
Telecommunications and Radio Engineering. 75:1101-1111
Publikováno v:
2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS).
The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the di