Zobrazeno 1 - 10
of 15
pro vyhledávání: '"I. P. Ostrovskii"'
Autor:
I. P. Ostrovskii, A. O. Druzhinin
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 227-231 (2020)
In present paper p-type GaPAs whiskers doped with Cu were obtained by VLS method in close bromine system. The whiskers have various morphologies and geometries: imperfect needle-like crystals, ribbons, perfect needle-like crystals and thin plates. Th
Externí odkaz:
https://doaj.org/article/f6ada43b977843d8a882bf972c315559
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 2, Pp 194-197 (2018)
Temperature dependencies of Bi2Se3 whiskers’ resistance with Pd doping concentration of 11019 cm-3 where measured in temperature range 4.2 - 300 K. At temperature 5.3 K a sharp drop in the whisker resistance was found. The observed effect is likely
Externí odkaz:
https://doaj.org/article/365e019e7c2d4fdeb3a862231c8fb5eb
Publikováno v:
Journal of Physical Studies. 9:71-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f5017a334dafe199f64ac040893ae42
https://doi.org/10.30970/jps.09.71
https://doi.org/10.30970/jps.09.71
Autor:
T G Cherneta, I P Ostrovskii, A I Klimovskaya, S V Svechnikov, I V Prokopenko, A Oberemok, O V Kurnosikov
Publikováno v:
Journal of Physics: Condensed Matter. 14:1735-1743
The surfaces of wire-like silicon crystals grown by self-organization processes are characterized using electron microscopy of high resolution, scanning tunnelling microscopy, x-ray microprobe analysis, secondary-ion mass spectroscopy, and Auger elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c99c0ee79514694b999b6c09bbbfee
https://doi.org/10.1088/0953-8984/14/8/304
https://doi.org/10.1088/0953-8984/14/8/304
Publikováno v:
Materials Science and Engineering: B. 88:298-301
The analysis of distribution on radii of wire-like crystals grown by self-organisation process is presented. The time evolution of radii as well as their distribution functions are described using different models of crystal growth and the Fokker–P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::174a5abe874cbbd85832d12af0336d8c
https://doi.org/10.1016/s0921-5107(01)00890-x
https://doi.org/10.1016/s0921-5107(01)00890-x
Autor:
I P Ostrovskii, S V Svechnikov, A.K Gutakovsky, A.L Aseev, A I Klimovskaya, Yu.A Nastaushev, I V Prokopenko
Publikováno v:
Materials Science and Engineering: C. 19:205-208
Naturally grown silicon wire-like crystals have been studied by transmission electron microscopy of high-resolution, scanning tunneling microscopy (STM), ion and Auger spectroscopy. It is known that they are the smallest Si-based heterostructures con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::719bba70ac6406472aa0a16ba981586b
https://doi.org/10.1016/s0928-4931(01)00463-5
https://doi.org/10.1016/s0928-4931(01)00463-5
Publikováno v:
Journal of Physics: Condensed Matter. 7:1229-1234
In this paper the results of an X-ray study of free-standing filament-like crystals of GexSi1-x solid solution are presented. The crystals were grown by a method of vapour transport reactions. The parameter x varied from 0.004 to 0.271. Independent m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c550a811b5808f1a1e6af5e70c8c78f
https://doi.org/10.1088/0953-8984/7/7/004
https://doi.org/10.1088/0953-8984/7/7/004
Publikováno v:
Inorganic Materials. 38:336-338
Data are presented on the morphology, composition, and electrical and photoelectric properties of HgxCd1 – x S (x = 0.25–0.6) whiskers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b69bb9414d9b2711db08f428fd9730df
https://doi.org/10.1023/a:1015141502696
https://doi.org/10.1023/a:1015141502696
Publikováno v:
Progress in SOI Structures and Devices Operating at Extreme Conditions ISBN: 9781402005763
Practical needs in Si-based superlattices and bulk circuits with high integration have initiated the intensive search for the new processes and technological approaches in SOI technologies (SIMOX, SIMNI, BISOI, including bounded-and-backside-etched a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854cc6c4b7c847bd2b44fe619f88fb48
https://doi.org/10.1007/978-94-010-0339-1_27
https://doi.org/10.1007/978-94-010-0339-1_27
Publikováno v:
SPIE Proceedings.
CdTe needle-like crystals were grown by CTR method in CdTe-Br system. Their resistivity is changed from 10 to 1000 (Omega) (DOT)cm depending on crystal diameter: it increases with the increase of wire diameters from 50 to 250 micrometer. Specimens wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::256384d16357fade5012d3fb76083e71
https://doi.org/10.1117/12.429747
https://doi.org/10.1117/12.429747