Zobrazeno 1 - 10
of 12
pro vyhledávání: '"I. O. Sokolovskyi"'
Autor:
I. O. Sokolovskyi, N. R. Kulish, R. M. Korkishko, Vitaliy Kostylyov, A. V. Sachenko, A. I. Skrebtii
Publikováno v:
Semiconductors. 50:523-529
The temperature dependences of the efficiency η of high-efficiency solar cells based on silicon are calculated. It is shown that the temperature coefficient of decreasing η with increasing temperature decreases as the surface recombination rate dec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e2c4a70e4505be8f260f68e6513cc4f
https://doi.org/10.1134/s1063782616040205
https://doi.org/10.1134/s1063782616040205
Autor:
I. O. Sokolovskyi, Vitaliy Kostylyov, A. V. Sachenko, E. I. Terukov, A. S. Abramov, A. V. Bobyl, Yu. V. Kryuchenko, I. E. Panaiotti
Publikováno v:
Semiconductors. 50:257-260
An approach is proposed to calculate the optimal parameters of silicon-based heterojunction solar cells whose key feature is a low rate of recombination processes in comparison with direct-gap semiconductors. It is shown that at relatively low majori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1cbe3cd7fdbe94e0cd546e3b222639
https://doi.org/10.1134/s1063782616020226
https://doi.org/10.1134/s1063782616020226
Autor:
Vitaliy Kostylyov, A. V. Sachenko, M.R. Kulish, I. O. Sokolovskyi, Anatoli I. Shkrebtii, R. M. Korkishko
Publikováno v:
Solid-State Electronics. 111:147-152
The conversion of energy of electrons produced by a radioactive source into electricity in a Si and SiC $\textit{p-n}$ junctions is modeled. The features of the generation function describing the electron-hole pair production by an electron flow and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b31b53440fa2ebe73fbb357973d0f8f7
https://doi.org/10.1016/j.sse.2015.05.042
https://doi.org/10.1016/j.sse.2015.05.042
Autor:
N. R. Kulish, I. O. Sokolovskyi, Vitaliy Kostylyov, R. M. Korkishko, Anatoli I. Shkrebtii, A. V. Sachenko
Publikováno v:
Semiconductors. 49:264-269
The photoconversion efficiency η in highly efficient silicon-based solar cells (SCs) is analyzed depending on the total surface-recombination rate Ss on illuminated and rear surfaces. Solar cells based on silicon p-n junctions and α-Si:H or α-SiC:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550e6cbde51340d20c3501333b752774
https://doi.org/10.1134/s1063782615020189
https://doi.org/10.1134/s1063782615020189
Autor:
A. V. Bobyl, V.M. Vlasyuk, A. V. Sachenko, V. N. Verbitskiy, E. I. Terukov, Pavel A. Forsh, Vitaliy Kostylyov, Denis M. Zhigunov, I. O. Sokolovskyi, M. Evstignecv
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Photoconversion and electroluminescence measurements in a set of a-Si:H/c-Si heterojunction solar cells (HJSCs) are carried out in a broad temperature range. The samples differed only in surface recombination velocity, $S$ , but otherwise they were f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d17f4ffb3586df1b3c190bba8fd9589d
https://doi.org/10.1109/pvsc.2017.8366781
https://doi.org/10.1109/pvsc.2017.8366781
Publikováno v:
Semiconductors. 48:675-682
The efficiency of multijunction solar cells (MSCs) η is calculated taking into account radiative recombination, Shockley-Read recombination, front and rear surface recombination, recombination in the space-charge regions, and recombination at hetero
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2ca78dbb30d6188ea8f5e5072a37a2
https://doi.org/10.1134/s1063782614050182
https://doi.org/10.1134/s1063782614050182
Autor:
V. P. Kostylev, I. O. Sokolovskyi, Yu. V. Kryuchenko, E. I. Terukov, Yu. A. Nikolaev, A. V. Sachenko, V. N. Verbitskii, A. V. Bobyl
Publikováno v:
Technical Physics. 58:1625-1631
The time dependences of the key characteristic of a-Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30°–60° and arbitrary d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a215c432db5dcfcb7fedde6b9b303a
https://doi.org/10.1134/s106378421311011x
https://doi.org/10.1134/s106378421311011x
Autor:
Yu. A. Nikolaev, Yu. V. Kryuchenko, A. V. Sachenko, V. N. Verbitskii, I. O. Sokolovskyi, A. V. Bobyl, E. I. Terukov, V. P. Kostylev
Publikováno v:
Technical Physics. 58:1632-1637
The annual dependences of the powers and energies generated by the unit area of a solar cell (SC) are calculated for a-Si:H-based SCs operating at latitudes of 45°N, 50°N, 55°N, and 60°N and in some geographical localities of Russia. Normalizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74fbbb56a08234415028e6434616817f
https://doi.org/10.1134/s1063784213110121
https://doi.org/10.1134/s1063784213110121
Hydrogenated amorphous silicon (a-Si:H) based solar cell: Material characterization and optimization
Autor:
A. Kazakevitch, I. M. Kupchak, Franco Gaspari, Yu. V. Kryuchenko, Anatoli I. Shkrebtii, A. V. Sachenko, I. O. Sokolovskyi
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
We present first-principles finite temperature molecular dynamics (MD) results of extensively simulated hydrogen bonding and diffusion inside an hydrogenated amorphous silicon (a-Si:H) network. The motivation comes from the necessity of fabricating a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd08e3613f5950211604d157d48a37d9
https://doi.org/10.1109/pvsc.2008.4922815
https://doi.org/10.1109/pvsc.2008.4922815
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
Polycrystalline Silicon (poly-Si) is widely used for large-volume production of low-cost terrestrial solar cells (SC). Poly-Si grain size and shape essentially determine SC performance and efficiency. In the poly-Si grain, photo-carrier recombination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5497b5192ac7ffb6479840cb1952ac18
https://doi.org/10.1109/pvsc.2008.4922817
https://doi.org/10.1109/pvsc.2008.4922817