Zobrazeno 1 - 10
of 14
pro vyhledávání: '"I. O. Rudyj"'
Autor:
G. Luka, I. S. Virt, L. F. Linnik, I. O. Rudyj, I. V. Kurilo, V. V. Tetyorkin, I. Ye. Lopatynskyi, Piotr Potera
Publikováno v:
Semiconductors. 47:1003-1007
The properties of Sb2S3 and Sb2Se3 thin films of variable thickness deposited onto Al2O3, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chambe
Publikováno v:
Surface and Interface Analysis. 40:641-644
The aim of this work is to determine the structure of native oxides of HgCdTe and PbSnTe grown by different methods. The starting materials were epitaxial layers HgCdTe and PbSnTe. Anodic oxides were fabricated under standard conditions, and chemical
Autor:
M. Bester, I. S. Virt, I. S. Bilyk, Marian Kuzma, Andrzej Kolek, Ivan Kurilo, I. O. Rudyj, V. D. Popovych
Publikováno v:
physica status solidi c. 3:1055-1058
Two types of cadmium telluride single crystals were investigated: undoped CdTe grown by Bridgeman method and highly doped CdTe:Cl obtained by STHM. Photoconductivity properties of CdTe crystals were studied by the transient photoconductivity method.
Publikováno v:
Applied Surface Science. 177:201-206
Films of HgCdTe have been obtained by pulsed laser deposition (PLD) using: Nd:YAG pulse laser (40 ns, 1 J/pulse, λ=1.06 μm) and XeCl excimer laser (25 ns, 150 mJ/pulse, λ=0.308 μm). Layers were deposited on monocrystalline and amorphous surfaces
Publikováno v:
Journal of Alloys and Compounds. 371:180-182
Thin solid films of Hg 1− x Cd x Te on KCl substrate have been obtained by pulse laser deposition (PLD). The crystal structure of the films obtained has been investigated using electron diffraction methods (TED). The texture crystal structure of th
Autor:
Santos-Cruz, D., de la L. Olvera-Amador, M., Mayen-Hernandez, S. A., Quiñones-Galván, J. G., Santos-Cruz, J., de Moure-Flores, F.
Publikováno v:
Journal of Laser Applications; Nov2021, Vol. 33 Issue 4, p1-7, 7p
Autor:
Virt, I., Rudyj, I.1, Kurilo, I.1, Lopatynskyi, I.1, Linnik, L.2, Tetyorkin, V.2, Potera, P.3, Luka, G.4
Publikováno v:
Semiconductors. Jul2013, Vol. 47 Issue 7, p1003-1007. 5p.
Autor:
Jhou, Yen-Wei, Chang, Cheng-Hsun-Tony, Sie, Siang-Yu, Yang, Chun-Kai, Hsieh, Chen-Yuan, Lin, Chih-Ming, Tsay, Jyh-Shen
Publikováno v:
Physical Chemistry Chemical Physics (PCCP); 7/14/2020, Vol. 22 Issue 26, p14900-14909, 10p
Autor:
Jain, Alok Kumar, Sifawa, Abubakar Abdullahi, Vajandar, Saumitra Kamalakar, Ren, Min-Qin, Osipowicz, Thomas, Malar, P.
Publikováno v:
Journal of Electronic Materials; Dec2019, Vol. 48 Issue 12, p7738-7746, 9p
Autor:
Virt, I. S.1, Kurilo, I. V.2, Rudyĭ, I. A.2, Sizov, F. F.3, Mikhaĭlov, N. M.4, Smirnov, R. N.4
Publikováno v:
Semiconductors. Jul2008, Vol. 42 Issue 7, p772-776. 5p. 2 Charts, 3 Graphs.