Zobrazeno 1 - 10
of 24
pro vyhledávání: '"I. N. Volovichev"'
Autor:
I. N. Volovichev, D. V. Kadygrob
Publikováno v:
Physical Review B. 105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3828a0a65980de0088e3a24867409818
https://doi.org/10.1103/physrevb.105.235425
https://doi.org/10.1103/physrevb.105.235425
Publikováno v:
2020 IEEE Ukrainian Microwave Week (UkrMW).
The electromagnetic resonant oscillations in a cavity dielectric layered ball with eccentric spherical dielectric inclusion have been studied. We have proposed a solution of Maxwell equations as an analytical method for computer simulation of a layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6434a1aea5c34368329741aa1aa230
https://doi.org/10.1109/ukrmw49653.2020.9252595
https://doi.org/10.1109/ukrmw49653.2020.9252595
A novel method for the calculation of eigenfrequencies of non-uniformly filled spherical cavity resonators is developed. The impact of the system symmetry on the electromagnetic field distribution as well as on its degrees of freedom (the set of reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c926d05231e717708d5075c2c51577c1
Publikováno v:
Philosophical Magazine. 97:683-692
The theory of the nonequilibrium charge carrier transport in unipolar multivalley semiconductors is developed. It is shown that the diffusion of photoexcited nonequilibrium heavy and light electrons in multivalley semiconductors is a correlated proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3f029c86f104cd8dfe85ea2622f163
https://doi.org/10.1080/14786435.2016.1274838
https://doi.org/10.1080/14786435.2016.1274838
Publikováno v:
2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET).
We develop a novel theoretical method for solving the Maxwell equations in cavity resonators with inhomogeneous and asymmetrical filling. The method relies on the transition from vector description of electromagnetic fields in the resonator to a desc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3e06f551bf5006d3558c232429c034
https://doi.org/10.1109/mmet.2018.8460365
https://doi.org/10.1109/mmet.2018.8460365
Publikováno v:
2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO).
We present a novel theoretical method for solving the Maxwell equations to obtain the frequency spectra of inhomogeneous and asymmetric cavity resonators using only two scalar potentials. The structure we study is a layered spherical cavity resonator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::312a911cadedf9550ebc0fa17dd97601
https://doi.org/10.1109/elnano.2018.8477479
https://doi.org/10.1109/elnano.2018.8477479
Autor:
I. N. Volovichev
Publikováno v:
physica status solidi (b). 252:1804-1809
The photo-emf and the short-circuit photocurrent in a closed circuit consisting of a bipolar semiconductor with uniform electron and hole dark densities, but inhomogeneous electron mobility is theoretically studied with emphasis on the influence of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa485d6972a5c49df293689f38403c3
https://doi.org/10.1002/pssb.201552008
https://doi.org/10.1002/pssb.201552008
Autor:
I. N. Volovichev, O. Yu. Titov, A. Gutiérrez, J. Giraldo, Yuri G. Gurevich, G. N. Logvinov, A. Ortiz
Publikováno v:
Microelectronics Journal. 36:886-889
In previous work it has been shown that the traditional approach to transport phenomena in bipolar semiconductors is inconsistent. In particular, the effect of non-equilibrium charge carriers and appropriate boundary conditions are not considered in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c35c6c99fa555e4e71b5d7605a0dac
https://doi.org/10.1016/j.mejo.2005.05.006
https://doi.org/10.1016/j.mejo.2005.05.006
Publikováno v:
physica status solidi (b). 242:971-982
The electron, hole, and phonon temperatures are calculated in semiconductors by taking into account the finite carrier diffusion and nonradiative recombination time in the sample. We assume that the energy of the modulated excitation radiation is gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3742828b8dfdb49ac29c01ff5dfe000
https://doi.org/10.1002/pssb.200402119
https://doi.org/10.1002/pssb.200402119
Publikováno v:
physica status solidi (b). 231:278-293
A new approach to thermoelectric phenomena, as a linear transport process of non-equilibrium charge carriers, is presented. The role of non-equilibrium carriers, as well as surface and bulk recombination, is demonstrated to be crucial even within a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1301e8fb14c53b18533a7dba828f4acb
https://doi.org/10.1002/1521-3951(200205)231:1<278::aid-pssb278>3.0.co
https://doi.org/10.1002/1521-3951(200205)231:1<278::aid-pssb278>3.0.co