Zobrazeno 1 - 10
of 58
pro vyhledávání: '"I. N. Arsentyev"'
Autor:
P. V. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len’shin, N. S. Buylov, K. A. Barkov, D. N. Nesterov, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsentyev, Sh. Sharafidinov, S. A. Kukushkin, I. A. Kasatkin
Publikováno v:
Semiconductors. 56:253-258
Autor:
P. V. Seredin, A. S. Len’shin, Ali Obaid Radam, Abduljabbar Riyad Khuder, D. L. Goloshchapov, M. A. Harajidi, I. N. Arsentyev, I. A. Kasatkin
Publikováno v:
Semiconductors. 56:259-265
Autor:
Dmitry Goloshchapov, I. N. Arsentyev, Nikita A. Pikhtin, D. N. Nikolaev, Pavel Seredin, Sergey O. Slipchenko
Publikováno v:
Semiconductors. 55:44-50
The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystalline Si (c-Si) layer on the optical properties of an epi
Autor:
Sergey O. Slipchenko, I. N. Arsentyev, Harald Leiste, D. N. Nikolaev, Yu. Yu. Khudyakov, Pavel Seredin, Nikita A. Pikhtin, Dmitry Goloshchapov
Publikováno v:
Semiconductors. 55:122-131
The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystal Si (c-Si) layer on the practical implementation and spec
Autor:
S. N. Timoshnev, H. Leiste, Pavel Seredin, A. M. Mizerov, S. A. Kukushkin, A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev, Yu. Yu. Khudyakov, A. N. Beltyukov, Dmitry Goloshchapov
Publikováno v:
Semiconductors. 54:596-608
A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and specific features of growth of GaN layers on SiC/por-Si/c-Si templates b
Autor:
K. A. Barkov, Pavel Seredin, E. V. Fomin, I. N. Arsentyev, Nikita A. Pikhtin, A. V. Fedyukin, V. A. Terekhov, A. D. Bondarev
Publikováno v:
Semiconductors. 53:1550-1557
Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different degrees. It is shown that growth on substrates misoriented with respect to the 〈100〉 dire
Autor:
Dmitry Goloshchapov, A. S. Lenshin, Monika Rinke, A. M. Mizerov, D. S. Zolotukhin, I. N. Arsentyev, Pavel Seredin, Harald Leiste
Publikováno v:
Semiconductors. 53:1120-1130
The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before G
Autor:
A. A. Samsonov, I. Ya. Mittova, B. V. Sladkopevtsev, E. V. Tomina, I. S. Shashkin, I. N. Arsentyev, G. I. Kotov, P. V. Kostenko
Publikováno v:
Semiconductors. 53:1054-1059
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are de
Autor:
D. S. Zolotukhin, I. N. Arsentyev, A. S. Lenshin, A. M. Mizerov, Dmitry Goloshchapov, Pavel Seredin, A. N. Beltyukov
Publikováno v:
Semiconductors. 53:993-999
The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar InxGa1 –xN structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates
Publikováno v:
Physica B: Condensed Matter. 563:62-71
With the use of reactive plasma-ion deposition, thin nano-sized films of AlN were obtained on the substrates of GaAs(100) with a different degree of misorientation relative to the direction. It was shown that the growth of the AlN films on GaAs subst