Zobrazeno 1 - 10
of 47
pro vyhledávání: '"I. N. Antonov"'
Publikováno v:
Technical Physics Letters. 48:19-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01e7f908b0a6d8ab2687f4e39a4cad9
https://doi.org/10.1134/s1063785022020018
https://doi.org/10.1134/s1063785022020018
Autor:
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov
Publikováno v:
Technical Physics Letters. 47:781-784
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5b0d7fc321403890d99c8a84574d66
https://doi.org/10.1134/s1063785021080149
https://doi.org/10.1134/s1063785021080149
Autor:
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov
Publikováno v:
Semiconductors. 55:731-734
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25399bd570822344b5d4936342f9b5e
https://doi.org/10.1134/s1063782621090050
https://doi.org/10.1134/s1063782621090050
Autor:
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveishchev, O. N. Gorshkov
Publikováno v:
Technical Physics Letters. 47:539-541
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26bb38260c92402c36d74184dc487305
https://doi.org/10.1134/s1063785021060043
https://doi.org/10.1134/s1063785021060043
Autor:
S. A. Denisov, V. G. Shengurov, A. V. Kruglov, A. I. Belov, A. N. Mikhailov, O. N. Gorshkov, I. N. Antonov, D. O. Filatov, S. V. Tikhov
Publikováno v:
Technical Physics. 65:1668-1676
It is shown that self-forming GeSi nanoislands built into the dielectric–semiconductor interface in the Si(001)-based metal–oxide–semiconductor (MOS) structures with the SiOx and ZrO2(Y) dielectric layers obtained by magnetron sputtering initia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae00c79ddcc427d6ec71d63a12dc70c
https://doi.org/10.1134/s1063784220100229
https://doi.org/10.1134/s1063784220100229
Autor:
M. E. Kompan, V. I. Voronkova, I. N. Antonov, Alexey M. Bainyashev, O. S. Telegina, Yu. V. Agapova, A. V. Gorokhovskii, N. V. Gorshkov, V. G. Goffman
Publikováno v:
Physics of the Solid State. 61:315-318
The manifestation of piezoelectric resonances in high-resolution impedance spectra was found and interpreted using the example of KDP crystal. A resonance signal inversion was observed in LiIO3 crystals, having significant ion conductivity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f541d58cce23109e02883a3fed7f48
https://doi.org/10.1134/s1063783419030144
https://doi.org/10.1134/s1063783419030144
Autor:
M A Ryabova, D O Filatov, M E Shenina, M N Koryazhkina, I N Antonov, V N Baranova, O N Gorshkov
Publikováno v:
Journal of Physics: Conference Series. 2227:012020
The resonant activation of resistance switching (RS) of a memristor based on an yttria stabilized zirconia (YSZ) film with embedded Au nanoparticles (NPs) was investigated. The switching was made by triangular pulses with high frequency (HF) sinusoid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5d4e154761b8d90c42b90316ae731f
https://doi.org/10.1088/1742-6596/2227/1/012020
https://doi.org/10.1088/1742-6596/2227/1/012020
Publikováno v:
Journal of Physics: Conference Series. 2086:012205
We report on the application of Contact Scanning Capacitance Microscopy (CSCM) to trace the growth of an individual Ni filament in a ZrO2(Y) film on a Ni sublayer (together with a conductive Atomic Force Microscope probe composing a nanometer-sized v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf6c430e49ac798d370a373ffb38fb5
https://doi.org/10.1088/1742-6596/2086/1/012205
https://doi.org/10.1088/1742-6596/2086/1/012205
Autor:
V A Vorontsov, D A Antonov, A V Kruglov, I N Antonov, M E Shenina, V E Kotomina, V G Shengurov, S A Denisov, V Yu Chalkov, D A Pavlov, D O Filatov, O N Gorshkov
Publikováno v:
Journal of Physics: Conference Series. 2086:012043
We report on an experimental study of resistive switching (RS) of individual dislocations in Ag/Ge/Si(001) memristors by combined grazing incidence ion sputtering of the Ag electrodes and application of Conductive Atomic Force Microscopy to provide a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f795963ea190582954775bb959f44cba
https://doi.org/10.1088/1742-6596/2086/1/012043
https://doi.org/10.1088/1742-6596/2086/1/012043
Autor:
O N Gorshkov, I N Antonov, M. A. Ryabova, D A Antonov, M N Koriazhkina, A A Kharcherva, Alexander A. Dubkov, D O Filatov
Publikováno v:
Journal of Physics: Conference Series. 1851:012003
Local resistive switching (RS) in ZrO2(Y) films on conductive substrates has been studied using Conductive Atomic Force Microscopy (CAFM). Switching was performed by triangle voltage pulses with superimposed a high-frequency (HF) sinusoidal signal ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a176c1b1b81fa89c60b1dc2b574379
https://doi.org/10.1088/1742-6596/1851/1/012003
https://doi.org/10.1088/1742-6596/1851/1/012003