Zobrazeno 1 - 10
of 164
pro vyhledávání: '"I. Mojzes"'
Publikováno v:
Vacuum. 84:247-250
Thermal interaction of indium phosphide (InP) bulk compound semiconductor with thin gold metal films was investigated in the course of the present work. The interaction of the InP/Au system resulted in a pattern showing fractal dimensions. The temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a783d12a77210f1e611dc7276c6b2549
https://doi.org/10.1016/j.vacuum.2009.06.004
https://doi.org/10.1016/j.vacuum.2009.06.004
Publikováno v:
Vacuum. 84:179-183
Structural entropy was developed for detecting the type of localization in charge distributions on a finite grid, especially in mesoscopic electronic systems. However, it is possible to detect and analyze superstructures, i.e., topologies consisting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9cd712ab51bf3d9c0370a45ea400319
https://doi.org/10.1016/j.vacuum.2009.04.025
https://doi.org/10.1016/j.vacuum.2009.04.025
Autor:
Zoltán B. Farkas, I. Mojzes
Publikováno v:
Scientometrics. 81:699-702
This paper aims to demonstrate briefly that major scientific achievements spread through the Internet according to an exponential expression until a saturation point.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd34e2a709e3476df4c11e1c490a14b2
https://doi.org/10.1007/s11192-008-2206-5
https://doi.org/10.1007/s11192-008-2206-5
Publikováno v:
Journal of Materials Science: Materials in Electronics. 17:321-324
The heat treatment of metallized (Au) compound semiconductors (InP) was studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the change in the surface morphology and the volatile component los
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca12b56c6b39e8b938c60f04d72a89d1
https://doi.org/10.1007/s10854-006-6951-z
https://doi.org/10.1007/s10854-006-6951-z
Publikováno v:
Nanopages. 1:85-95
We present a simple method of nanocrystal growth during the heating of Au-covered GaAs single crystals in a closed quartz ampoule, previously evacuated to 10-1 Pa. The process is the final stage of surface transformations in such crystals which inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd5d38ed017182682648bceeb34ea808
https://doi.org/10.1556/nano.1.2006.1.4
https://doi.org/10.1556/nano.1.2006.1.4
Publikováno v:
Defect and Diffusion Forum. :891-898
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4218dbf077f2704047c11b3043fccd
https://doi.org/10.4028/www.scientific.net/ddf.237-240.891
https://doi.org/10.4028/www.scientific.net/ddf.237-240.891
Publikováno v:
physica status solidi (c). :1051-1054
Heat treatment is an essential technological step for making ohmic contacts to compound semiconductors. During the heat treatment a remarkable volatile component (arsenic) loss takes place due to the thermal decomposition of GaAs and the interactions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b26044ec3984bede5546c2431d71be2
https://doi.org/10.1002/pssc.200306326
https://doi.org/10.1002/pssc.200306326
Publikováno v:
Journal of Electronic Materials. 31:239-243
The ultraviolet (UV) laser treatment of polyimide films can lead to the formation of a conductive area. The formation of a conductive layer starts at a threshold dosage. This conductive layer consists of carbon-rich clusters. Silver salt added to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::181d58ea92655a95c00d84a755957b0e
https://doi.org/10.1007/s11664-002-0138-z
https://doi.org/10.1007/s11664-002-0138-z
Publikováno v:
Vacuum. 84:251-253
The thermal interactions of thin AlGe and AlNiGe layers with a bulk GaAs monocrystal were investigated. The heat treatment of these systems was carried out in the working chamber of a scanning electron microscope. The SEM pictures were analysed using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08578ba2eb3a3466c1f5d5c32abb765
https://doi.org/10.1016/j.vacuum.2009.06.005
https://doi.org/10.1016/j.vacuum.2009.06.005
Publikováno v:
Vacuum. 84:152-154
Fullerene layers molecular beam epitaxially grown on, a vanadium–selenide substrate are investigated and the morphology of the layered structures is studied. The individual layer morphologies are derived from the atomic force microscopy picture of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0f40901bb7b7a16ea8802915953538
https://doi.org/10.1016/j.vacuum.2009.04.060
https://doi.org/10.1016/j.vacuum.2009.04.060