Zobrazeno 1 - 10
of 50
pro vyhledávání: '"I. Miyanaga"'
Autor:
K. Tanida, S. Suzuki, T. Seo, M. Morinaga, H. Korogi, M. Tetani, M. Hamada, R. Eto, T. Yamashita, Y. Kato, N. Sato, T. Shimizu, T. Hanawa, H. Kubo, K. Ueda, F. Ito, Y. Noguchi, M. Nakamura, R. Mizukoshi, M. Takeuchi, M. Suzuki, N. Niisoe, I. Miyanaga, A. Ikeda, S. Matsumoto
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dad9bb264289ad723efc81d29e810839
https://doi.org/10.1109/iitc52079.2022.9881305
https://doi.org/10.1109/iitc52079.2022.9881305
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 6:324-331
A real-time failure analysis technique for ULSI circuits using photon emission is proposed. This technique utilizes a photon detection system combined with a circuit tester. Improved failure detection is achieved because the tester can bias arbitrary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1da5202f3245f90a1277ea1e8319c1d
https://doi.org/10.1109/66.267642
https://doi.org/10.1109/66.267642
Autor:
Hidekazu Oda, T. Eimori, Yuzuru Ohji, I. Miyanaga, M. Nakamura, K. Shiga, M. Ogura, Tomohiro Yamashita, M. Inuishi, K. Nakanishi, Koji Eriguchi, T. Hayashi, A. Kajiya, Toshio Yamada, Masabumi Kubota, Hiroshi Umeda, Hiroaki Nakaoka
Publikováno v:
International Meeting for Future of Electron Devices, 2004..
For scaled CMOSFETs, it becomes much more difficult to ensure sufficient reliability of gate-oxide film, since power supply voltage is not scaled proportionally with gate-oxide. As well as the increase of the electrical stress that put on the gate-ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003b9debd223b4a9ae73b4f3c7c63fde
https://doi.org/10.1109/imfedk.2004.1566439
https://doi.org/10.1109/imfedk.2004.1566439
Autor:
Yuzuru Ohji, I. Miyanaga, M. Nakamura, K. Nakanishi, T. Hayashi, A. Kajiya, K. Ota, T. Eimori, Toshio Yamada, K. Shiga, Tomohiro Yamashita, Masabumi Kubota, M. Inuishi, Koji Eriguchi, Hidekazu Oda, M. Ogura, Hiroshi Umeda, Hiroaki Nakaoka
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
Nitridation technique of the gate-oxide top surface has been much studied to suppress the boron penetration from the doped gate poly-silicon and proved to be efficient against NBTI degradation. However there is another path for boron to penetrate to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e45112a87fbc8449851a9d62964d8d
https://doi.org/10.1109/vlsit.2004.1345438
https://doi.org/10.1109/vlsit.2004.1345438
Autor:
Toshiyuki Oashi, M. Matsuura, I. Miyanaga, K. Tomita, T. Kishimoto, K. Hashimoto, M. Ogura, T. Yamada, Y. Nishioka, H. Yuasa, K. Tsukamoto, Masahide Inuishi, T. Satake, T. Inbe, A. Kajiya, Takahisa Eimori, K. Eriguchi, M. Nakamura
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
We have integrated a high speed and high density 6T-SRAM cell (0.998 /spl mu/m/sup 2/) for system-on-a-chip (SOC) using enhanced 100 nm CMOS logic technology. This is achieved by a systematic integration methodology, which includes high-NA ArF lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865d942382b82c52c44a6cd919fe8222
https://doi.org/10.1109/vlsit.2002.1015369
https://doi.org/10.1109/vlsit.2002.1015369
Autor:
K. Itonaga, Koji Eriguchi, Hirokazu Sayama, A. Kajiya, I. Miyanaga, M. Ogura, H. Oda, H. Morimoto, T. Tsutsumi, T. Eimori
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
We propose the "bi-layer" CoSi/sub 2/ structure with smaller grain size, which realizes low sheet resistance for 35 nm gate length as well as low junction leakage current for 100 nm junction depth for the first time. The formation of the bi-layer CoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbee4a38e95ba4652274716ceb02e5a
https://doi.org/10.1109/vlsit.2002.1015424
https://doi.org/10.1109/vlsit.2002.1015424
Publikováno v:
ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.
The technique detects the failure of ULSIs operating in real time. This technique was realized by combining a photodetection system with a LSI tester. By this combination, arbitrary blocks in the LSI chip can be biased with real signals intentionally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9614e6aac237293fab35f67e50a56d
https://doi.org/10.1109/icmts.1992.185947
https://doi.org/10.1109/icmts.1992.185947
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
This paper describes an electrothermal circuit simulation using an equivalent thermal network for electrostatic discharge (ESD). Electrothermal transient characteristics in ESD protection devices are clarified in detail by modeling of complicated sna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d04123baf1f7d1faf32509ed463a6f1
https://doi.org/10.1109/vlsit.1994.324424
https://doi.org/10.1109/vlsit.1994.324424
Publikováno v:
Proceedings 1997 International Conference on Multichip Modules.
A new wafer-level burn-in (WLBI) technology is reported in this paper. By this, firm contacts on 2,756 bond pads provided on a 6" diameter wafer are made in a temperature range from room to 125/spl deg/C. In order to establish the contacts, a polyimi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980acb3b4df0d495894c3ec0f44f08d2
https://doi.org/10.1109/icmcm.1997.581186
https://doi.org/10.1109/icmcm.1997.581186
Publikováno v:
Radiation medicine. 11(3)
Two cases of pelvic kidney with other associated congenital anomalies were demonstrated using ultrasonography (US) and computed tomography (CT). Urogenital anomalies are not uncommon, but Riedel's hepatic lobe is a rare anomaly in patients with pelvi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::839cefac2b22c05614bdaa965599ab54
https://pubmed.ncbi.nlm.nih.gov/8372238
https://pubmed.ncbi.nlm.nih.gov/8372238