Výsledky vyhledávání - "I. M. Vitomirov"

Deep levels and band bending at GaP(100) and (110) surfaces

Autor: Jerry M. Woodall, I. M. Vitomirov, S. Chang, Peter D. Kirchner, C. L. Lin, D. T. McInturff, A.D. Raisanen, Leonard J. Brillson

Publikováno v: Surface Science. :303-308

We have observed optical transitions involving multiple, deep levels at GaP surfaces and interfaces whose energies and intensities depend on reconstruction and atomic composition. Comparison of clean GaP(100) epilayers prepared by ultrahigh vacuum de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8be64220a1d9e9f5e3e685888dede01
https://doi.org/10.1016/0039-6028(94)90410-3

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Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces

Autor: Peter D. Kirchner, Jerry M. Woodall, I. M. Vitomirov, D. T. McInturff, C. L. Lin, A. Raisanen, Leonard J. Brillson

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:841-847

We have used soft x‐ray photoemission spectroscopy (SXPS), Auger electron spectroscopy (AES), and low‐energy electron diffraction (LEED) to investigate thermally induced changes in atomic composition, bonding, and geometric ordering at GaP(100) s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3fadf1df896480f37041bd29ddc9df7
https://doi.org/10.1116/1.578315

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Control of As diffusion using ultrathin metal passivating layers at GaAs(100) surfaces

Autor: Peter D. Kirchner, I. M. Vitomirov, George David Pettit, Jerry M. Woodall, Leonard J. Brillson, A. Raisanen

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1106-1113

We have performed low‐energy cathodoluminescence spectroscopy (CLS) and synchrotron radiation photoemission (SXPS) measurements of Sb‐passivated, clean and ordered molecular‐beam epitaxy‐grown GaAs(100) surfaces. SXPS measurements show an eff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e06604e6f155daaf172ea21e13880c15
https://doi.org/10.1116/1.578449

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Processing and reconstruction effects on Al-GaAs(100) barrier heights

Autor: George David Pettit, I. M. Vitomirov, Peter D. Kirchner, Leonard J. Brillson, A. Raisanen, Jerry M. Woodall

Publikováno v: Journal of Electronic Materials. 22:309-313

We have used low-energy electron diffraction, soft x-ray photoemission, and cathodoluminescence (CLS) spectroscopies to investigate the effects of the GaAs(100) surface geometry and composition on the formation of electrically active interface states

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9d82b7771242395d800abe2635ee152
https://doi.org/10.1007/bf02661382

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Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies

Autor: A.D. Raisanen, R.E. Viturro, S. Chang, Peter D. Kirchner, George David Pettit, Jerry M. Woodall, I. M. Vitomirov, Leonard J. Brillson

Publikováno v: Applied Surface Science. :667-675

The dependence of Schottky barrier formation on surface and interface preparation offers several broad avenues for understanding electronic structure and charge transfer at metal/semiconductor junctions. Interface cathodo- and photoluminescence measu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eba67add998a4433b6760d451f7b3db0
https://doi.org/10.1016/0169-4332(93)90737-v

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Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)

Autor: I. M. Vitomirov, A. Raisanen, S. Chang, R. E. Viturro, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, J. M. Woodall

Publikováno v: Journal of Electronic Materials. 22:111-117

Effects of substrate doping and growth method on interface deep level formation and Schottky barrier height were investigated using low-energy catho doluminescence and soft x-ray photoemission spectroscopy. Our results reveal that for Au/GaAs(100) co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36671d0771385c89353edc352c7f3244
https://doi.org/10.1007/bf02665732

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Impact of surface processing on Al/GaAs(100) interface states

Autor: Jerry M Woodall, I. M. Vitomirov, George David Pettit, Peter D. Kirchner, A. Raisanen, Leonard J. Brillson

Publikováno v: Solid State Communications. 84:61-65

Discrete deep levels form at Al/GaAs(100) interfaces whose energies and state densities change with surface preparation conditions. Modifications in surface chemical composition and reconstruction with annealing temperature produce systematic changes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a99fac3fa56b31e958d9f34815b2091
https://doi.org/10.1016/0038-1098(92)90295-k

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Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions

Autor: Jerry M. Woodall, I. M. Vitomirov, Shu Chang, George David Pettit, Adam C. Finnefrock, A. Raisanen, Peter D. Kirchner, R. E. Viturro, Leonard J. Brillson

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:749-753

Low energy cathodoluminescence spectroscopy measurements of GaAs(100) surfaces prepared by thermal desorption of an As passivation layer reveal deep level transitions localized at the clean surfaces and metallized interfaces. These surface and interf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4460431625ee1e0641a46204b7916410
https://doi.org/10.1116/1.578157

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Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces

Autor: I. M. Vitomirov, Christian Mailhiot, Jerry M Woodall, Leonard J. Brillson, George David Pettit, S. Chang, Y. J. Kime, D. F. Rioux, Peter D. Kirchner

Publikováno v: Physical Review B. 45:13438-13451

Soft-x-ray photoemission studies of Al and Au on molecular-beam epitaxially grown GaAs(100) vicinal surfaces at low temperature demonstrate orientation-dependent interface electronic properties and chemistry. Misorientation of the substrate introduce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::910d220ba184ce32deb8a78235157786
https://doi.org/10.1103/physrevb.45.13438

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Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces

Autor: I. M. Vitomirov, Peter D. Kirchner, Shu Chang, Leonard J. Brillson, George David Pettit, Jerry M. Woodall, D. F. Rioux

Publikováno v: Physical Review B. 44:1391-1394

Les gradins associes aux surfaces intentionnellement desorientees de GaAs (100) produisent des etats de charge d'interface qui peuvent substantiellement modifier la hauteur de barriere de Schottky. Ces etats d'interface sont situes pres du milieu de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece248acb1a38a847966146c750f060f
https://doi.org/10.1103/physrevb.44.1391

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