Zobrazeno 1 - 10
of 105
pro vyhledávání: '"I. M. Templeton"'
Publikováno v:
Semiconductor Science and Technology. 10:483-488
A room-temperature spatially resolved and polarization resolved photoluminescence (PL) technique is demonstrated to be a useful tool for studying the intermixing process in InGaAsP multiple-quantum-well systems disordered by focused ion beam implanta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb88d3bd08c715c9df40515f13dc19c3
https://doi.org/10.1088/0268-1242/10/4/017
https://doi.org/10.1088/0268-1242/10/4/017
Publikováno v:
Journal of The Electrochemical Society. 140:2332-2338
Negative- and positive-tone e-beam resists have been exposed by focused beams of Si ++ and Be ++ ions. The resolution of the negative resist, Shipley SAL601-ER7, was better than 0.2 μm and vertical sidewalls were achieved. A dose of 2×10 12 ions cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805413ad8e280275763690ea0023b52b
https://doi.org/10.1149/1.2220819
https://doi.org/10.1149/1.2220819
Publikováno v:
IEEE Photonics Technology Letters. 5:794-797
The authors demonstrate the integration of a grating demultiplexer with curved output waveguides and a MSM photodetector array in InGaAs/AlGaAs/GaAs operating in the 1- mu m wavelength region. The structure provides 38 channels with 1-nm channel spac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb6a4389b4b4d73c8ccf0c3ca5ffb82b
https://doi.org/10.1109/68.229809
https://doi.org/10.1109/68.229809
Publikováno v:
Canadian Journal of Physics. 70:1023-1026
Photoluminescence spectroscopy (PL) is used to monitor the degree of focused ion beam induced interdiffusion in InGaAs–GaAs quantum wells using 100 keV Ga+ and Si+ ions. The observed transition energy shifts are consistent with the effects of chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d71c54202826b0f16572fc8b0779a1
https://doi.org/10.1139/p92-164
https://doi.org/10.1139/p92-164
Fabrication of nanostructures in strained InGaAs/GaAs quantum wells by focused‐ion‐beam implantation
Autor:
Robin L. Williams, I. M. Templeton, G. C. Aers, S. Charbonneau, D. Stevanovic, T. E. Jackman, F. J. D. Almeida, Margaret Buchanan, L. B. Allard
Publikováno v:
Journal of Applied Physics. 72:422-428
Low‐temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused‐ion‐beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfb0a3281fe90486e9091d9bd6af33c6
https://doi.org/10.1063/1.351870
https://doi.org/10.1063/1.351870
InGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency, over 11% (power>100 mW) and a divergence of 1° are obtained. We also demonstrate the first CW operation near room temperature
Semiconductor Laser Confer
Semiconductor Laser Confer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f591d6f7ef3c4f16067394159ffb000
https://nrc-publications.canada.ca/eng/view/object/?id=9d6ce67b-b390-4721-98a8-e58032b96dc9
https://nrc-publications.canada.ca/eng/view/object/?id=9d6ce67b-b390-4721-98a8-e58032b96dc9
Autor:
I. M. Templeton, E. V. Kornelsen
Publikováno v:
Microelectronic Engineering. 11:645-648
The sensitivity of PMMA resist to ion impact is such that the resist may be completely exposed by as few as 8x1012 ions/cm2, or 50 ions per 25 nm square pixel. With numbers as small as this, the statistical distribution of the precise landing points
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b98af2f73731e995387017eb0c45736
https://doi.org/10.1016/0167-9317(90)90188-y
https://doi.org/10.1016/0167-9317(90)90188-y
Autor:
C. Maritan, C. Wu, G. Knight, I. Najafi, Mahmoud Fallahi, Cornelis Blaauw, Toshihiko Makino, M. Svilans, J. Glinski, I. M. Templeton, R. Maciejko
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
We report room temperature operation of an electrically-pumped circular grating surface-emitting DBR laser. The InGaAsP/InP device emits more than IOmW at a wavelength of 1.3m under pulsed excitation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf29fe6638d30e4d20c48d76f6428b2a
https://doi.org/10.1109/islc.1992.763581
https://doi.org/10.1109/islc.1992.763581
Autor:
K.A. McGreer, F. Chatenoud, Mahmoud Fallahi, R. Normandin, I. M. Templeton, R. Barber, Andre Delage
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2e20f4e81e0f99bd06f785937eb23d
https://doi.org/10.1109/leosst.1992.697442
https://doi.org/10.1109/leosst.1992.697442
Publikováno v:
IEEE Photonics Technology Letters. 6:1280-1282
In this letter, we present the first room temperature continuous wave operation of circular-grating surface-emitting DBR lasers. The structure is an InGaAs/GaAs strained multiquantum-well. A modified fabrication process with a better control on the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b56e2fb849ed03abda657114cb48c4a2
https://doi.org/10.1109/68.334811
https://doi.org/10.1109/68.334811