Zobrazeno 1 - 6
of 6
pro vyhledávání: '"I. M. Kizyak"'
Publikováno v:
Sensor Letters. 3:117-125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f1ba62e65ed65f4d7d4ae7e5257900
https://doi.org/10.1166/sl.2005.025
https://doi.org/10.1166/sl.2005.025
Autor:
V. E. Primachenko, S. I. Kirillova, E. B. Kaganovich, E. G. Manoilov, Ja. F. Kononets, E. F. Venger, Yu. A. Tsyrkunov, B. M. Bulakh, I. M. Kizyak
Publikováno v:
Semiconductors. 39:565-571
The temperature dependences of photovoltage induced by intense pulses of red and white light, along with the time-resolved spectral dependences of photoluminescence, are studied for porous silicon structures por-Si/p-Si). These structures have been o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e012fb73da21adf5eda12900807fb84f
https://doi.org/10.1134/1.1923566
https://doi.org/10.1134/1.1923566
Publikováno v:
Semiconductors. 38:598-602
Nanocrystalline silicon films formed using laser ablation of silicon targets were studied using electron spin resonance. The measurements were performed in the X band with modulation of the magnetic field at a frequency of ∼100 kHz at temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab9a00747d3791b3bc09c280c1fd27e
https://doi.org/10.1134/1.1755899
https://doi.org/10.1134/1.1755899
Publikováno v:
Semiconductors. 38:113-119
The effect of doping with gold on the photoluminescence properties and electronic states of structures consisting of porous Si and single-crystal Si, formed by chemical stain etching, was studied. The time-resolved photoluminescence spectra and the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e13a1eaba3085f5ef9d5ec6bb70c1a3
https://doi.org/10.1134/1.1641142
https://doi.org/10.1134/1.1641142
Autor:
S. I. Kirillova, V. E. Primachenko, S. V. Svechnikov, I. M. Kizyak, E. F. Venger, É. B. Kaganovich, É. G. Manoilov
Publikováno v:
Semiconductors. 36:1027-1032
Doping nanocrystalline silicon (nc-Si) films grown by laser ablation with gold leads to a considerable suppression of the nonradiative recombination of the charge carriers and excitons, an increase in the intensity and stability of the visible photol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8444a5b168e120819d6e87b12c30a811
https://doi.org/10.1134/1.1507286
https://doi.org/10.1134/1.1507286
Publikováno v:
Scopus-Elsevier
The edge photoluminescence of single-crystal silicon (c-Si) with a peak at ∼1.09 eV at room temperature is observed for structures that consist of nanocrystalline silicon (nc-Si) and c-Si. The structures are obtained by pulsed-laser deposition of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fee460397bfaddc15e8ab511f0bad1c2
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044494298&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044494298&partnerID=MN8TOARS
