Zobrazeno 1 - 10
of 18
pro vyhledávání: '"I. Liniichuk"'
Publikováno v:
Semiconductors. 39:856-860
The possibility of fabricating a ferroelectric FET based on a Pb(ZrxTi1−x)O3/SnO2 (PZT/SnO2) heterostructure is investigated. Sb-doped epitaxial SnO2/Al2O3 thin film deposited by YAG laser ablation from a metal target is used as the FET channel. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e374b711e67b794798ed849c2657c619
https://doi.org/10.1134/1.1992648
https://doi.org/10.1134/1.1992648
Publikováno v:
Ferroelectrics. 286:237-244
A possibility of fabricating an all-perovskite field effect transistor with a deep conductance modulation is shown. A 5-10 nm thick LSCO film was used as a channel, and a ferroelectric gate insulator was 100 nm thick PLZT. The channel conductance mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4326e941b2601c8709d27aa550cbb19
https://doi.org/10.1080/00150190390206419
https://doi.org/10.1080/00150190390206419
Publikováno v:
Superconductor Science and Technology. 16:120-124
A narrow dip is observed around zero magnetic field in magnetization curves M(B) of superconducting YBCO films with about 10 nm thickness. This anomaly occurs in the same field range with an anomaly of ac surface impedance Z(B) found recently in thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549ec1d14df1e3db10b4cb4ecf5eac68
https://doi.org/10.1088/0953-2048/16/1/321
https://doi.org/10.1088/0953-2048/16/1/321
Publikováno v:
Integrated Ferroelectrics. 43:101-113
A possibility of deep (>70%) modulation of La 1.94 Sr 0.06 CuO 4 and La 1.85 Sr 0.15 CuO 4 channel conductance has been shown in all-perovskite field effect transistor with a (Pb 0.95 La 0.05 )(Zr 0.2 Ti 0.8 )O 3 ferroelectric as a gate insulator. Re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4961b29ecf31e9ae40f4282f682fb2
https://doi.org/10.1080/10584580212361
https://doi.org/10.1080/10584580212361
Autor:
A Titkov, I. V. Grekhov, I. Liniichuk, M Dunaevsky, V Sakharov, L. Delimova, A. Lyublinsky, I. Veselovsky
Publikováno v:
Physica C: Superconductivity. 324:39-46
It is known that the critical temperature T c of ultrathin YBCO films is reduced to values far less than 77 K. To improve the superconducting properties of ultrathin YBCO films, we developed a new buffer layer which allowed an increase in the critica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8017cb6148edf701c7181c20ed6722
https://doi.org/10.1016/s0921-4534(99)00423-2
https://doi.org/10.1016/s0921-4534(99)00423-2
Autor:
V. Borevich, L. Delimova, I. Liniichuk, A. Lyublinsky, M. Baydakova, V. Davydov, I. V. Grekhov
Publikováno v:
ResearcherID
A new structure of buffer layer for ultrathin YBCO film is offered. This structure represents a dielectric material composed of insulator grains and HTSC grains. The latter serve as perfect nuclei while ultrathin HTSC YBCO film is grown on this buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::795507495b906681c934b681da688d7f
https://doi.org/10.1016/s0921-4534(96)00704-6
https://doi.org/10.1016/s0921-4534(96)00704-6
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 17:640-642
A possibility of fabricating an all-perovskite field-effect transistor with a deep conductance modulation is shown. A 5– 10 nm thick La 2− x Sr x CuO 4 (LSCO) film was used as a channel, and a ferroelectric gate insulator was 100 nm thick (Pb 0.9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e13f42292ae410be9e99ba7292bcb7
https://doi.org/10.1016/s1386-9477(02)00917-7
https://doi.org/10.1016/s1386-9477(02)00917-7
Publikováno v:
Technical Physics Letters. 27:17-19
An all-perovskite field-effect transistor with a (Pb0.95La0.05)(Zr0.2Ti0.8)O3 gate insulator exhibits a strongly modulated room-temperature conductivity in a La1.94Sr0.06CuO4 channel. The channel conductivity is controlled by the hopping mechanism wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05b9fa7335300d4e60455e74165df0c
https://doi.org/10.1134/1.1345155
https://doi.org/10.1134/1.1345155
Publikováno v:
SPIE Proceedings.
A possibility of fabricating all-perovskite field effect transistor is shown, which can provide the development of a nonvolatile memory cell with a nondestructive readout of information. A thin (approximately 5 - 10 nm) Sr-doped lantanate cuprate (LS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2d60a822c94eb6985f058aaeacb2e59
https://doi.org/10.1117/12.514253
https://doi.org/10.1117/12.514253
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