Zobrazeno 1 - 10
of 70
pro vyhledávání: '"I. Lagnado"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:2193-2196
A 23.8-GHz tuned amplifier is demonstrated in a partially scaled 0.1-/spl mu/m silicon-on-insulator CMOS technology. The fully integrated three-stage amplifier employs a common-gate, source-follower, and cascode with on-chip spiral inductors and MOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e26ae1f426c00e466a155001d12d39d1
https://doi.org/10.1109/tmtt.2002.802334
https://doi.org/10.1109/tmtt.2002.802334
Autor:
I. Lagnado, P. R. de la Houssaye
Publikováno v:
Microelectronic Engineering. 59:455-459
Through the characterization of structural defects in bonded silicon on sapphire handle-substrates (SOS) that develop with exposure to device processing temperatures, we have investigated and implemented a methodology to study wafer bonding reaction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c8d959e65560a578fc1512a97c13c3
https://doi.org/10.1016/s0167-9317(01)00642-6
https://doi.org/10.1016/s0167-9317(01)00642-6
Autor:
Pin-Fan Chen, Peter M. Asbeck, M.E. Wood, C.E. Chang, G.A. Garcia, P.R. de la Houssaye, R.A. Johnson, I. Lagnado
Publikováno v:
IEEE Transactions on Electron Devices. 45:1047-1054
This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ce23d21fe907669207d9b55bd7d2e2
https://doi.org/10.1109/16.669525
https://doi.org/10.1109/16.669525
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:2066-2073
Four- and 13-GHz tuned amplifiers have been implemented in a partially scaled 0.1-1 /spl mu/m CMOS technology on bulk, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) substrates. The 4-GHz bulk, SOI, and SOS amplifiers exhibit forward gains
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a7b8bfd7197be0b13d8004f5cb9e8e
https://doi.org/10.1109/4.735548
https://doi.org/10.1109/4.735548
Autor:
C. E. Chang, G.A. Garcia, Peter M. Asbeck, G. Imthurn, B. Offord, R. Johnson, I. Lagnado, P.R. de la Houssaye
Publikováno v:
IEEE Electron Device Letters. 16:289-292
Microwave characteristics of n and p-MOS transistors fabricated in thin film (50 and 100 nm) silicon-on-sapphire with T-gate lengths drawn at 0.5 and 0.7 /spl mu/m are reported. The observed f/sub max/ was as high as 32 GHz for a n-MOS 0.7 /spl mu/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d338c3dbc0101d071dfe8d21c6b5c4
https://doi.org/10.1109/55.790738
https://doi.org/10.1109/55.790738
Autor:
L. Perraud, John A. Ott, S.J. Koester, C. S. Webster, P.R. de la Houssaye, R. Hammond, I. Lagnado, J. O. Chu, Keith Jenkins, Patricia M. Mooney
Publikováno v:
IEEE Electron Device Letters. 22:92-94
The dc and microwave results of Si/sub 0.2/Ge/sub 0.8//Si/sub 0.7/Ge/sub 0.3/ pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with L/sub g/=0.1 /spl mu/m displayed high transc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4911d93d27d78aab78c91def42cb444b
https://doi.org/10.1109/55.902842
https://doi.org/10.1109/55.902842
Publikováno v:
IEEE Microwave and Guided Wave Letters. 10:421-423
A bulk silicon divide-by-two dynamic frequency divider with maximum clock speed of 26.5 GHz has been achieved. The dynamic divider operates from 6.5 GHz to 26.5 GHz. The design is based on n-channel MOSFET's with an effective gate length of 0.1 /spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6503075479a3d287c1b52c7becc40564
https://doi.org/10.1109/75.877232
https://doi.org/10.1109/75.877232
Publikováno v:
Analog Integrated Circuits and Signal Processing. 1:107-117
A simple CMOS circuit which performs analog four-quadrant multiplication is described. Transconductance as well as voltage-mode operation is practicable. The basic circuit consists of only two transistors, at least one of which is depletion-mode. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc33b497bf01975cab179f2884dd608f
https://doi.org/10.1007/bf00161304
https://doi.org/10.1007/bf00161304
Autor:
I. Lagnado, Guofu Niu, S.J. Mathew, Patricia M. Mooney, Bernard S. Meyerson, John A. Ott, W.B. Dubbelday, J. O. Chu, John D. Cressler, Karen L. Kavanagh
Publikováno v:
IEEE Electron Device Letters. 20:173-175
We present the dc, ac, and low-frequency noise characteristics of SiGe channel pFETs on silicon-on-sapphire (SOS). The SiGe pFETs show higher mobility, transconductance, and cutoff frequency compared to the Si control devices. A significant reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7588c6400833fce37b213b0bf457b522
https://doi.org/10.1109/55.753757
https://doi.org/10.1109/55.753757
Autor:
M.E. Wood, G.A. Garcia, P.R. de la Houssaye, R.A. Johnson, I. Lagnado, C.E. Chang, Peter M. Asbeck
Publikováno v:
IEEE Microwave and Guided Wave Letters. 7:350-352
A low-noise amplifier operating at 2.4 GHz has been fabricated with MOSFETs in silicon-on-sapphire technology. The amplifier has a 2.8-dB noise figure, 10-dB gain, and 14-dBm output referred IP3 with 14-mW power dissipation. The amplifier was matched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fb54c228461b1ec2f48d422f202b0a
https://doi.org/10.1109/75.631198
https://doi.org/10.1109/75.631198