Zobrazeno 1 - 10
of 55
pro vyhledávání: '"I. L. Shul'pina"'
Publikováno v:
IUCrJ, Vol 3, Iss 3, Pp 200-210 (2016)
The authors' experience of the application of X-ray diffraction imaging in carrying out space technological experiments on semiconductor crystal growth for the former USSR and for Russia is reported, from the Apollo–Soyuz programme (1975) up to the
Externí odkaz:
https://doaj.org/article/cd774708ccab448ebaafae27f4442385
Publikováno v:
Crystallography Reports. 66:387-393
The specific features of the formation of concentration inhomogeneities in crystals grown by the Czochralski method (GaSb:Te, Ge:Ga) and by the Bridgman method (Y3Al5O12:Nd, ZnGeP2, GaSb:Te, Ge:Ga) are analyzed. Digital processing of growth striation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae3d0f94c7b1536925d384a0fc3ae4aa
https://doi.org/10.1134/s1063774521030111
https://doi.org/10.1134/s1063774521030111
Publikováno v:
Technical Physics. 66:453-460
Vertical through Si(Ga) p channels are created at 1450 K in c-Si(111) plates by thermomigration of local gallium zones. To this end, a technique is proposed and implemented for the formation of local zones consisting in the filling of linear grooves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87479061a113457f338fb2859d003bb9
https://doi.org/10.1134/s1063784221030178
https://doi.org/10.1134/s1063784221030178
Autor:
I. L. Shul’pina, S. G. Simakin, A. N. Zaichenko, S. Yu. Martyushov, B. M. Seredin, Andrey A. Lomov
Publikováno v:
Technical Physics Letters. 46:279-282
A technique that allows one to form thick thermomigration silicon layers heavily doped with gallium for prospective power electronic devices is proposed. The dependences of the perfection of structure and the composition of the layers on the temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd98e676611b2904b848cae78e10d9b
https://doi.org/10.1134/s1063785020030268
https://doi.org/10.1134/s1063785020030268
Autor:
I. A. Prokhorov, I. L. Shul’pina
Publikováno v:
Physics of the Solid State. 61:541-547
Objective factors that allow the experiment on growing crystals of a Ge–Si–Sb solid solution on the Soyuz–Apollo spacecraft to take a special place among many experiments on growing single crystals aboard spacecrafts are analyzed. In the study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a33fe70a5301ebdbc145c90fd0d3147
https://doi.org/10.1134/s1063783419040292
https://doi.org/10.1134/s1063783419040292
Publikováno v:
Physics of the Solid State. 57:2257-2263
The formation of the block structure and residual stresses in sapphire single-crystal tubes grown from the melt by the Stepanov method has been studied. The distribution of the difference in the residual stress tensor components (σφ–σr) in a thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a68ab4c20dbaf06309be228b3ec33f90
https://doi.org/10.1134/s1063783415110207
https://doi.org/10.1134/s1063783415110207
Publikováno v:
Crystallography Reports. 60:377-383
The formation of blocks in shaped sapphire rods of two crystallographic orientations has been investigated. It is shown that, when growth occurs in the direction of the optical c axis, blocks are formed with a higher probability than in the case of g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93203beeac80d5ae4ee8d7455bf85743
https://doi.org/10.1134/s1063774515020145
https://doi.org/10.1134/s1063774515020145
Publikováno v:
Technical Physics. 59:1566-1569
X-ray topography and high-resolution diffractometry methods are used for testing GaAs wafers from different manufacturers, which are used as substrates for epitaxial growth in construction of power semiconductor devices. Typical features of such wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd03e6e2006a17fb44749aae6357dda
https://doi.org/10.1134/s1063784214100296
https://doi.org/10.1134/s1063784214100296
Autor:
I. A. Prokhorov, V. N. Vlasov, N. A. Pakhanov, V. I. Folomeev, V. K. Artem’ev, I. L. Shul’pina, E. N. Korobeinikova, Yu. A. Serebryakov, V. S. Sidorov
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 8:666-674
Problems concerning the technology of growing highly homogeneous semiconductor crystals are discussed. The dependence between the inhomogeneity of GaSb:Te substrates and the efficiency of thermophotovoltaic converters (TPVCs) fabricated on their base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90b1cbcbbad03e4954004a5e6faadbd7
https://doi.org/10.1134/s1027451014040144
https://doi.org/10.1134/s1027451014040144
Autor:
I. A. Prokhorov, I. L. Shul’pina
Publikováno v:
Crystallography Reports. 57:661-669
In this paper, which is dedicated to the 100th anniversary of the discovery of X-ray diffraction (which occurs in 2012), the role and significance of X-ray diffraction topography for materials science are described. The basic principles, methods, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfda0250b99e11506a7a484c128bf0c6
https://doi.org/10.1134/s106377451205015x
https://doi.org/10.1134/s106377451205015x