Zobrazeno 1 - 10
of 34
pro vyhledávání: '"I. L. Krestnikov"'
Autor:
R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Soshnikov, L. Leandro, N. Akopian, G. E. Cirlin
Publikováno v:
Technical Physics Letters. 47:405-408
Autor:
A V Sakharov, N. N. Ledentsov, N.A. Maleev, A. F. Tsatsul'nikov, Dieter Bimberg, Zh. I. Alferov, V. M. Ustinov, A E Zhukov, James A. Lott, A. R. Kovsh, I. L. Krestnikov
Publikováno v:
Semiconductor Science and Technology. 16:844-848
Different types of microcavities for GaAs-based light emitting devices operating in the 1.3 µm spectral range are analysed. Microcavity light-emitting diodes (MC LEDs) can be fabricated with different designs of distributed Bragg reflectors (DBRs),
Autor:
Nikolai N. Ledentsov, V. M. Ustinov, Zh. I. Alferov, James A. Lott, A. V. Sakharov, A. F. Tsatsul’nikov, A. E. Zhukov, A. R. Kovsh, I. L. Krestnikov, Dieter Bimberg, Nikolai A. Maleev
Publikováno v:
Semiconductors. 35:854-859
Various structures with optical microcavities and active layers based on InGaAs/GaAs quantum dots MBE-grown on GaAs substrates were studied theoretically and experimentally. LEDs for the 1.3 µm spectral range with narrow spectral characteristics and
Autor:
A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, C. Moeller, Zh. I. Alferov, Nikolai A. Maleev, E. Pawlowski, Dieter Bimberg, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul’nikov, Nikolai N. Ledentsov, W. Passenberg, A. E. Zhukov, H. Kuenzel
Publikováno v:
Journal of Crystal Growth. :1146-1150
Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be cont
Autor:
Dieter Bimberg, H. Künzel, I. L. Krestnikov, A. V. Sakharov, A. F. Tsatsul’nikov, W. Passenberg, C. Möller, E. Pawlowski, Nikolai A. Maleev, Zh. I. Alferov, S. S. Mikhrin, Nikolai N. Ledentsov, V. M. Ustinov, A. R. Kovsh
Publikováno v:
physica status solidi (b). 224:803-806
AlGaAs/GaAs microcavity structures with InAs/InGaAs quantum dot (QD) active regions were grown by molecular beam epitaxy (MBE) on GaAs substrates and their optical characteristics were studied. Methods for the optimization of optical emission propert
Autor:
A. V. Sakharov, A. F. Tsatsul’nikov, Zh. I. Alferov, A. S. Usikov, Axel Hoffmann, Dieter Bimberg, Nikolai N. Ledentsov, I. L. Krestnikov, Dagmar Gerthsen, J. Holst, W. V. Lundin, I.P. Soshnikov, A. C. Plaut
Publikováno v:
physica status solidi (a). 180:91-96
Autor:
Dieter Bimberg, Andreas Rosenauer, Axel Hoffmann, Annette S. Plaut, A. V. Sakharov, I. L. Krestnikov, A. F. Tsatsul’nikov, André Strittmatter, Dagmar Gerthsen, A. S. Usikov, A. P. Kartashova, Zh. I. Alferov, I.P. Soshnikov, Dimitri Litvinov, N. N. Ledentsov, W. V. Lundin
Publikováno v:
Semiconductor Science and Technology. 15:766-769
Coherent ultrathin GaAsN insertions are formed in a GaN matrix by predeposition of an ultrathin GaAs layer on a GaN surface, followed by annealing in an NH3 atmosphere and overgrowth with GaN. During the overgrowth, most of the As atoms are substitut
Autor:
B. V. Volovik, A. R. Kovsh, D. A. Bedarev, A. E. Zhukov, A. F. Tsatsul’nikov, I. L. Krestnikov, Zh. I. Alferov, Yu. M. Shernyakov, Alexandra Suvorova, P. S. Kop’ev, V. M. Ustinov, S. S. Mikhrin, I. N. Kayander, V. A. Odnoblyudov, Nikolai N. Ledentsov, Dieter Bimberg, Nikolai A. Maleev
Publikováno v:
Semiconductors. 34:594-597
A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence o
Autor:
I. L. Krestnikov, V. A. Semenov, A. V. Sakharov, A. F. Tsatsul’nikov, Zh. I. Alferov, A. S. Usikov, W. V. Lundin, N. N. Ledentsov, Axel Hoffmann, Dieter Bimberg
Publikováno v:
physica status solidi (b). 216:511-515
Autor:
Dieter Bimberg, J. Holst, W. V. Lundin, M. V. Baidakova, A. V. Sakharov, A. F. Tsatsul’nikov, N. N. Ledentsov, A. S. Usikov, V. A. Semenov, I. L. Krestnikov, Axel Hoffmann, Dagmar Gerthsen, Yu. G. Musikhin, I.P. Soshnikov, Zh. I. Alferov
Publikováno v:
physica status solidi (b). 216:435-440