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pro vyhledávání: '"I. L. Kalenteva"'
Publikováno v:
Semiconductors. 46:184-187
The influence of defect formation upon the deposition of a Mn δ layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region