Výsledky vyhledávání - "I. L. Bronevoi"

Amplification Lengths of Spectral Components of Intrinsic Stimulated Picosecond Emission. Dependence of the Characteristic Relaxation Time of These Components on Their Amplification Lengths. Relation Between Stimulated and Spontaneous Emission Spectra in GaAs

Autor: N. N. Ageeva, D. N. Zabegaev, I. L. Bronevoi, A. N. Krivonosov

Publikováno v: Semiconductors. 55:162-167

The high-power picosecond optical pumping of a thin GaAs layer generates intense picosecond stimulated emission. The emission spectrum is a light continuum. Based on the results of previous experimental work, the following is carried out. (a) The amp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c36a98b887ecb4a271bf2732e9f02b45
https://doi.org/10.1134/s1063782621020044

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Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission

Autor: A. N. Krivonosov, D. N. Zabegaev, N. N. Ageeva, I. L. Bronevoi

Publikováno v: Semiconductors. 55:154-161

The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d2a3ec8907783ab53e61e10f8493950
https://doi.org/10.1134/s1063782621020056

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Electron-Population Bragg Grating Induced in an AlxGa1 –xAs–GaAs–AlxGa1 –xAs Heterostructure by Intrinsic Stimulated Picosecond Emission

Autor: D. N. Zabegaev, I. L. Bronevoi, N. N. Ageeva, A. N. Krivonosov

Publikováno v: Semiconductors. 54:1205-1214

It is shown that modulation of the spectrum of stimulated picosecond emission generated in an AlxGa1 – xAs–GaAs–AlxGa1 – xAs waveguide heterostructure upon the optical pumping of GaAs, as well as a number of previous experimental results, can

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f3a323f30643cfc30c6a51902a1475e
https://doi.org/10.1134/s1063782620100024

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Anticorrelation between the Intensity of Stimulated Picosecond Emission in GaAs and the Characteristic Time of Charge-Carrier Cooling

Autor: A. N. Krivonosov, I. L. Bronevoi, N. N. Ageeva, D. N. Zabegaev

Publikováno v: Semiconductors. 54:22-27

During the powerful picosecond optical pumping, intense stimulated picosecond emission arises in a thin GaAs layer. It is found that, first, the maximum emission intensity decreases as the diameter of the pump beam increases (while the pump energy de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::066b3f5a93ba888e1a7e3faba1246838
https://doi.org/10.1134/s1063782620010029

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Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time

Autor: I. L. Bronevoi, D. N. Zabegaev, N. N. Ageeva, A. N. Krivonosov

Publikováno v: Semiconductors. 53:1431-1438

During the powerful picosecond optical pumping of a thin (~1 μm) GaAs layer, a stimulated intense (up to 1 GW/cm2) picosecond emission arises. It is found that the characteristic picosecond relaxation time τr of the emission and of the carrier dens

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::179a6cc193a54c96e221a13c499cdf74
https://doi.org/10.1134/s1063782619110022

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Switching of Spectral Modes of Picosecond Stimulated Radiation of GaAs due to Stimulated Raman Scattering in the Presence of Interband Oscillations of Electrons in the Radiation Field

Autor: A. N. Krivonosov, I. L. Bronevoi, D. N. Zabegaev, N. N. Ageeva

Publikováno v: Journal of Communications Technology and Electronics. 63:1235-1244

It was found that self-modulation of the spectrum of high-intensity stimulated radiation of a thin (about 1 μm) GaAs layer can be represented as switching of spectral modes of radiation caused by stimulated Raman scattering (SRS). It is shown that t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7411c6efc2389e0eb35e5f88c141dc7f
https://doi.org/10.1134/s1064226918100017

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Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs

Autor: N. N. Ageeva, A. N. Krivonosov, D. N. Zabegaev, I. L. Bronevoi

Publikováno v: Semiconductors. 51:565-570

The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35f0c71d40be69582a94553ac3a83157
https://doi.org/10.1134/s1063782617050025

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