Zobrazeno 1 - 10
of 288
pro vyhledávání: '"I. Kasai"'
In 2017, the Event Horizon Telescope (EHT) Collaboration succeeded in capturing the first direct image of the center of the M87 galaxy. The asymmetric ring morphology and size are consistent with theoretical expectations for a weakly accreting superm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::bb5047b643f37c590b276976bf76d23f
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3068465
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3068465
Autor:
J. W. Bangs, Jeffrey M. Peterson, T. Vang, Scott M. Johnson, J. A. Franklin, I. Kasai, Edward P. Smith, Justin Gordon Adams Wehner, D. D. Lofgreen, M. Reddy
Publikováno v:
Journal of Electronic Materials. 37:1274-1282
Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and highly functional third-generation infrared (IR) focal-panel arrays (FPAs). We have described h
Autor:
W. A. Radford, Jeffrey M. Peterson, Edward P. Smith, Scott M. Johnson, M. Reddy, J. A. Franklin, I. Kasai
Publikováno v:
Journal of Electronic Materials. 35:1283-1286
HgCdTe offers significant advantages over other similar semiconductors, which has made it the most widely utilized variable-gap material in infrared (IR) focal plane array (FPA) technology. HgCdTe hybrid FPAs consisting of two-dimensional detector ar
Publikováno v:
Journal of Electronic Materials. 31:220-226
Results are reported on the molecular-beam epitaxial (MBE) growth and electrical performance of HgCdTe midwave-infrared (MWIR) detector structures. These devices are designed for operation in the 140–160 K temperature range with cutoff wavelengths
Autor:
G. M. Venzor, Rajesh D. Rajavel, O. K. Wu, M. S. Smith, T. J. de Lyon, J. A. Vigil, Steven L. Bailey, J. E. Jensen, I. Kasai, Scott M. Johnson, C. A. Cockrum, W. L. Ahlgren
Publikováno v:
Journal of Electronic Materials. 27:550-555
Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si vi
Autor:
Jeffrey M. Peterson, J. W. Bangs, E. A. Patten, R. E. Bornfreund, Edward P. Smith, J. E. Jensen, Scott M. Johnson, L. T. Pham, Brett Z. Nosho, W. A. Radford, T. J. De Lyon, John A. Roth, I. Kasai
Publikováno v:
SPIE Proceedings.
Raytheon Vision Systems (RVS) is developing two-color and large format single color FPAs fabricated from molecular beam epitaxy (MBE) grown HgCdTe triple layer heterojunction (TLHJ) wafers on CdZnTe substrates and double layer heterojunction (DLHJ) w
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Autor:
J, Hirabayashi, K I, Kasai
Publikováno v:
Progress in molecular and subcellular biology. 19
Publikováno v:
Proceedings International Symposium on Advanced Packaging Materials. Processes, Properties and Interfaces (IEEE Cat. No.99TH8405).
Wafer level CSP (WLCSP) has been paid great attention due to its miniature size. It is a real chip size package from the package perspective. It is also a known good encapsulated die (KGED) from the die perspective. This means that the boundary betwe
Autor:
A. H. Kalma, J.E. Jensen, Franklin M. Roush, J. E. Robinson, D.A. Estrada, G.M. Venzor, I. Kasai
Publikováno v:
2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542).
The AFRL has pursued high temperature IR FPAs for three years. A 10 K increase has been obtained to date by thinning the HgCdTe base-layer. A contract has recently been let to DRS Infrared Technologies to further increase operating temperature by 15