Zobrazeno 1 - 10
of 13
pro vyhledávání: '"I. K. Polushina"'
Publikováno v:
Semiconductors. 37:1291-1295
Al-doped zinc-oxide (ZnO:Al) films are obtained by magnetron sputtering. Based on an investigation of electrical properties of the films, it is shown that the electron density in these films is as high as 5×1020 cm−3 and is practically constant in
Autor:
Yu. V. Rud, I. K. Polushina, Nils C. Fernelius, A. A. Vaipolin, V. Yu. Rud, E. I. Terukov, Yu. A. Nikolaev
Publikováno v:
Semiconductors. 37:641-645
Single crystals of the CdV2S4 ternary compound are grown, and their crystal structure, electrical properties, and optical absorption are studied. The substitution of vanadium for Group III element in AIIB 2 III C 4 VI compounds results in the formati
Autor:
A. A. Vaipolin, E. I. Terukov, I. K. Polushina, Yu. V. Rud, V. Yu. Rud, Nils C. Fernelius, Yu. A. Nikolaev
Publikováno v:
Semiconductors. 37:656-660
A new class of ternary semiconductor compounds has been proposed and synthesized. ZnFe2S4 single crystals, which belong to this class, have been grown for the first time; and their structural, electrical, and optical properties have been investigated
Autor:
E. I. Terukov, I. K. Polushina, Yu. A. Nikolaev, A. A. Vaipolin, Yu. V. Rud, Nils C. Fernelius, V. Yu. Rud
Publikováno v:
Semiconductors. 37:553-558
Photosensitive structures based on CdGa2Se4 single crystals have been fabricated for the first time: In/CdGa2Se4 surface-barrier structures and InSe/CdGa2Se4 heterostructures. The current-voltage characteristics and the quantum efficiency spectra of
Publikováno v:
Physical Review B. 62:10194-10198
In this paper we report on the thermopower and electrical conductivities of ${\mathrm{Ti}}_{4}{\mathrm{AlN}}_{2.9}$ and ${\mathrm{Ti}}_{3}{\mathrm{Al}}_{1.1}{\mathrm{C}}_{1.8}$ in the 300--850 K temperature range. We also measured the room temperatur
Publikováno v:
Physics of the Solid State. 41:1084-1087
The first results obtained in studies of the temperature dependences of electrical conductivity and Hall constant of n-CdGeAs2 single crystals prepared by low-temperature crystallization are reported. It has been established that the method developed
Publikováno v:
Semiconductors. 32:933-936
The electrical properties and photoluminescence spectra of single crystals of the ternary compounds CuIn5S8, AgIn5S8 and their solid solutions have been investigated. We have determined the type of conductivity, the mobility, charge carrier concentra
Autor:
M. C. Ohmer, Gert Irmer, I. K. Polushina, Peter G. Schunemann, J. Monecke, B. Kh. Bairamov, V. Yu. Rud, Yu. V. Rud, Nils C. Fernelius
Publikováno v:
Physics of the Solid State. 40:190-194
Spectra of inelastic light scattering by optical phonons in p-CdGeAs2 single crystals were obtained for the first time. The observed clear polarization dependence and the absence of any appreciable dependence of the intensity and frequency of the obs
Autor:
N. I. Konstantinova, Yu. V. Rud, V. F. Gremenok, E. P. Zaratakaya, I. K. Polushina, I. V. Bodnar
Publikováno v:
Journal of Applied Spectroscopy. 60:265-268
Publikováno v:
Semiconductors. 33:645-647
GaAs-AIIBIVC 2 V single crystals are grown by crystallization from dilute gallium fluxed solutions. The electric and luminescence properties of the crystals obtained are investigated. It is shown that the technological process is accompanied by the s