Zobrazeno 1 - 10
of 47
pro vyhledávání: '"I. Jenčič"'
Publikováno v:
Philosophical Magazine. 83:2557-2571
Thermal annealing, irradiation with electrons (25-300 keV), and irradiation with photons (hν = 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f007fa868b4c5d0b7924a11c87ecb4ff
https://doi.org/10.1080/1478643031000119976
https://doi.org/10.1080/1478643031000119976
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 186:126-131
Isolated amorphous zones were created in Ge by implantation with 50 keV Xe ions. Recrystallization of these zones was stimulated by irradiation with electrons having energy from 25 to 300 keV. The process was studied by using transmission electron mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2be6a021a08940919d2ba5cfb095114
https://doi.org/10.1016/s0168-583x(01)00892-8
https://doi.org/10.1016/s0168-583x(01)00892-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :197-201
Electron transparent GaAs samples were implanted at 300 K and at 90 K with 50 keV Xe ions, which created small (∼8 nm in diameter) amorphous zones in the crystalline structure. These amorphous zones were observed using a transmission electron micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9bc0c1a6c8a69d57a342e57b3325a3
https://doi.org/10.1016/s0168-583x(01)00339-1
https://doi.org/10.1016/s0168-583x(01)00339-1
Autor:
I.M Robertson, I Jenčič
Publikováno v:
Materials Science in Semiconductor Processing. 3:311-315
Electron transparent Si, Ge and GaP samples were implanted with 50 keV Xe+ ions to a dose around 1011 ions/cm2. At this implantation condition, each heavy ion created a small, spatially isolated amorphous zone. Following the ion implantation, the sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f02907d2ee694d87068c15346d04062
https://doi.org/10.1016/s1369-8001(00)00049-4
https://doi.org/10.1016/s1369-8001(00)00049-4
Publikováno v:
Journal of Applied Physics. 87:49-56
The damage produced in GaAs by implantation with low energy heavy ions has been studied as a function of ion mass and implantation temperature (30 and 300 K). The experiments were performed in situ in the microscope-accelerator facility at Argonne Na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725092afce3d5db8f73e1e12228e5d5c
https://doi.org/10.1063/1.371825
https://doi.org/10.1063/1.371825
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:345-349
Si and Ge samples of different crystal orientations were implanted at room temperature with Xe + ions to a dose around 10 11 cm −2 ; this low dose produces spatially isolated amorphous zones. The samples were subsequently irradiated in a transmissi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::128876a3c1355140b14c399d353b2a6a
https://doi.org/10.1016/s0168-583x(98)00781-2
https://doi.org/10.1016/s0168-583x(98)00781-2
Publikováno v:
Radiation Effects and Defects in Solids. 142:449-457
The interatomic potentials of Stillinger-Weber and Tersoff were incorporated into the randomization-and-relaxation model, which was originally developed for modelling amorphous silicon by using the Keating interatomic potential. The inclusion of more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c2d33c88b3d2810b1d79c887c08e0cc
https://doi.org/10.1080/10420159708211626
https://doi.org/10.1080/10420159708211626
Autor:
Ian M. Robertson, I. Jenčič
Publikováno v:
Journal of Nuclear Materials. 239:273-278
Spatially isolated amorphous zones produced in Si, Ge and Gal' by low energy, low dose ion implantations can be regrown at room temperature by using an electron beam to stimulate the process. The rate at which these zones regrow is dependent on the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afff6227ce7ba610cb9ecf443bb5786a
https://doi.org/10.1016/s0022-3115(96)00485-0
https://doi.org/10.1016/s0022-3115(96)00485-0
Autor:
I. Jenčič, Ian M. Robertson
Publikováno v:
Journal of Materials Research. 11:2152-2157
Spatially isolated amorphous regions in Si and Ge have been regrown at room temperature by using an electron beam with an energy less than that required to cause displacement damage in crystalline material. The rate at which the zones regrow is a fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::037fc9be4fa06196804fb0248bfa8cb3
https://doi.org/10.1557/jmr.1996.0274
https://doi.org/10.1557/jmr.1996.0274
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 102:202-206
The structure and stability of isolated amorphous zones, produced by heavy ion irradiation of semiconductors, has been modeled by using the randomization and relaxation method. The evolution of the temperature and the size of the relaxation volume du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b668262c366db588513450893a071c
https://doi.org/10.1016/0168-583x(95)80141-8
https://doi.org/10.1016/0168-583x(95)80141-8