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pro vyhledávání: '"I. I. Razgulyaev"'
Publikováno v:
Russian Microelectronics. 42:517-524
Opportunities of the use of an XMD-300 diffractometer in three mapping schemes have been considered, namely, grazing primary beam, grazing diffracted beam, and the θ-2θ scheme, for the study of crystal perfection of semiconductor heterostructures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f039694ca4b12b18f5a0db4b01aa6bd
https://doi.org/10.1134/s1063739713080106
https://doi.org/10.1134/s1063739713080106
