Zobrazeno 1 - 10
of 107
pro vyhledávání: '"I. I. Abramov"'
Autor:
I. I. Abramov
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 32-42 (2019)
The short overview of works performed in the research Laboratory for Physics of Micro- and Nanoelectronic Devices of BSUIR with the direct participation of author or made by himself is given.
Externí odkaz:
https://doaj.org/article/80b6aeeec42c4a95918fb7620d7f8469
Autor:
I. I. Abramov
Publikováno v:
Russian Microelectronics. 51:376-386
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da66f9c2d7ed2bdd1b3152b0065c8c7
https://doi.org/10.1134/s1063739722700147
https://doi.org/10.1134/s1063739722700147
Publikováno v:
Russian Microelectronics. 50:118-125
Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare the results of calculating the current–voltage (I–V) characteristics of fiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aa6d13950da0a1d1686b7d7e925fc45
https://doi.org/10.1134/s1063739721010029
https://doi.org/10.1134/s1063739721010029
Autor:
I. I. Abramov, I. A. Romanova, Vladimir Labunov, Radioelectronics, P. Browka St. , Minsk, Belarus, I. Yu. Shcherbakova, N. V. Kolomejtseva
Publikováno v:
Ural Radio Engineering Journal. 3:343-355
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b3f81e983073dc702bef6e2a2eb04c0
https://doi.org/10.15826/urej.2019.3.4.001
https://doi.org/10.15826/urej.2019.3.4.001
Autor:
I. I. Abramov, V. A. Labunov, I.Y. Shcherbakova, I. A. Romanova, N. V. Kolomejtseva, Minsk Radioelectronics
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 20:643-650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a056549e5a7de9a497ddb29684f5c9d8
https://doi.org/10.17587/nmst.20.643-650
https://doi.org/10.17587/nmst.20.643-650
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 19:714-721
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd9329c9e01300b35eb697cf0731f181
https://doi.org/10.17587/nmst.19.714-721
https://doi.org/10.17587/nmst.19.714-721
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4753ab6019b04c702e414b0370706ab6
https://doi.org/10.1117/12.2520729
https://doi.org/10.1117/12.2520729
Publikováno v:
SPIE Proceedings.
Graphene is a nanomaterial that due to unique properties has attracted great interest for various applications, in particular, for development of nanoelectronic devices. In the paper the graphene field-effect transistors (GFET) and resonant tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d10fecf679346de19f7e89090109df
https://doi.org/10.1117/12.2265988
https://doi.org/10.1117/12.2265988
Publikováno v:
Russian Microelectronics. 41:314-323
A satisfactory agreement between calculated voltage-current characteristics of GaAs/AlAs and Si/SiGe heterostructure resonant tunneling diodes and experimental data was obtained by using combined two-band models based on semiclassical and quantum-mec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::128ae3788e01fd7ae6e14d75566f2677
https://doi.org/10.1134/s106373971203002x
https://doi.org/10.1134/s106373971203002x
Publikováno v:
Semiconductors. 41:1375-1380
A two-band combined model of a resonant tunneling diode, based on the semiclassical and quantum mechanical (the wave function formalism) approaches is proposed. The main specific feature of this model is the possibility of taking into account the int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1a2703aa8b88b690512ef541af053b
https://doi.org/10.1134/s106378260711019x
https://doi.org/10.1134/s106378260711019x