Zobrazeno 1 - 10 of 185 pro vyhledávání: '"I. I. Abramov"'
1
To flora of mosses (Bryophyta) of the South Ossetia (based on the thesis by I. I. Abramov)
Autor: G. Ya. Doroshina
Publikováno v: Novosti sistematiki nizshikh rastenii. 49:314-321
Revision of moss collections from South Ossetia earlier known only from an unpublished thesis by I. I. Abramov and kept in the Herbarium of Komarov Botanical Institute (LE) resulted in confirmation of records of Amphidium mougeotii, Bryum algovicum,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2122f8fd9ecff687d207345d7db08a99
https://doi.org/10.31111/nsnr/2015.49.314
Zobrazit plný text záznamu
2
Theoretical studies of field-effect transistors and resonant tunneling diodes based on graphene / I. I. Abramov, V. A. Labunov, N. V. Kolomejtseva, I. A. Romanova, I. Y. Shcherbakova
Нанотехнологии, наноструктуры, квантовые явления. Наноэлектроника. Приборы на квантовых эффектах В докладе описаны комбинированные мо
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1594::dfbbe0a0da59a96a18beb266ac28d991
http://elib.bsu.by/handle/123456789/215236
Zobrazit plný text záznamu
3
Akademický článek
PHYSICS AND SIMULATION OF VARIOUS MICRO- AND NANOELECTRONIC DEVICES
Autor: I. I. Abramov
Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 32-42 (2019)
The short overview of works performed in the research Laboratory for Physics of Micro- and Nanoelectronic Devices of BSUIR with the direct participation of author or made by himself is given.
Externí odkaz: https://doaj.org/article/80b6aeeec42c4a95918fb7620d7f8469
Zobrazit plný text záznamu
6
Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics
Autor: Vladimir Labunov, I. A. Romanova, I. Yu. Shcherbakova, I. I. Abramov, N. V. Kolomeitseva
Publikováno v: Russian Microelectronics. 50:118-125
Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare the results of calculating the current–voltage (I–V) characteristics of fiv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3aa6d13950da0a1d1686b7d7e925fc45
https://doi.org/10.1134/s1063739721010029
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje