Zobrazeno 1 - 2
of 2
pro vyhledávání: '"I. Hsuing Huang"'
Publikováno v:
SPIE Proceedings.
As 6% attenuated phase shift masks (PSM) become commonly used in ArF advanced lithography for the 90nm Technology and mass production to print lines/ spaces as well as contacts, the specification and control of the phase angle and the width of the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76580721e1be37fcc308218073e359dc
https://doi.org/10.1117/12.535167
https://doi.org/10.1117/12.535167
Publikováno v:
SPIE Proceedings.
Due to the existing problems and delay of 157nm lithography tool, extension of the ArF (193nm) lithography process with resolution enhancement techniques (RET) should be considered for the 65nm generation lithography and beyond. The mature double-exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d572dd454f654d990939f5d3729a47
https://doi.org/10.1117/12.534641
https://doi.org/10.1117/12.534641