Zobrazeno 1 - 10
of 85
pro vyhledávání: '"I. Golecki"'
Autor:
I Golecki
Publikováno v:
World of Carbon ISBN: 9780415308267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0489f3215655e3246d7143178e65cb02
https://doi.org/10.4324/9780203166789_chapter_6
https://doi.org/10.4324/9780203166789_chapter_6
Publikováno v:
Applied Physics Letters. 62:3135-3137
Continuous, ultrathin silicon carbide (SiC) films of less than 10 nm have been grown on Si by rapid thermal chemical vapor deposition carbonization with high propane flow rates at 1100–1300 °C. X‐ray and electron diffraction techniques indicated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159a426aa5603ecb91c7c3cac05cd84d
https://doi.org/10.1063/1.109106
https://doi.org/10.1063/1.109106
Publikováno v:
Journal of Electronic Materials. 16:315-321
Buried layers of SiC were formed in (100) single-crystal bulk silicon and silicon-on-sapphire by ion implantation of 125–180 keV, (0.56-1.00) × 1018 C/cm2 at 30–40 μA/ cm2 into samples held at 450-650° C. The as-implanted and 950° C annealed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba89344c6dd1367d3baa6a7f0cf42d8d
https://doi.org/10.1007/bf02657905
https://doi.org/10.1007/bf02657905
Autor:
D S Tannhauser, I Golecki
Publikováno v:
Journal of Physics E: Scientific Instruments. 8:21-27
A novel system for the measurement of changes in stoichiometry of metal oxides in equilibrium with CO2-CO mixtures is described. In this system the change in the refractivity of the gas mixture above the oxide is measured, using an interferometer. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::521a6b940d2e95d4614df384676388a1
https://doi.org/10.1088/0022-3735/8/1/011
https://doi.org/10.1088/0022-3735/8/1/011
Publikováno v:
Journal of The Electrochemical Society. 130:1752-1758
Croissance epitaxique de couches monocristallines de Si sur les faces (100), (110) et (111) de monocristaux de zircone stabilises par l'oxyde d'yttrium. Croissance des couches de Si par pyrolyse de SiH 4 entre 950-1075°C a des vitesses de 0,08-1,2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab79f54361b5b5946d8830597a79abaa
https://doi.org/10.1149/1.2120076
https://doi.org/10.1149/1.2120076
Publikováno v:
Applications of Surface Science. 9:299-314
Chemically-vapor-deposited (CVD), epitaxial, 0.15–0.40 μm thick silicon-on-sapphire (SOS) films have been melted and epitaxially regrown in the 1 ms time regime by means of a cw Ar laser. Analysis using MeV 4 He + Rutherford backscattering/channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78bc9f2cc1df3178cfb378a496a715f3
https://doi.org/10.1016/0378-5963(81)90044-1
https://doi.org/10.1016/0378-5963(81)90044-1
Publikováno v:
Thin Solid Films. 67:293-297
Pulsed electron beam annealing was applied to p-type silicon wafers coated with vacuum-deposited antimony layers to obtain p-n junctions. Antimony atoms were found to migrate into the substrate to a distance fo 2000–3000 A. The antimony-doped layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d7134fcab5183b52fbb69f53503e05
https://doi.org/10.1016/0040-6090(80)90462-9
https://doi.org/10.1016/0040-6090(80)90462-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research. :125-129
The mixing of thin evaporated films of Ti, Cr and Ni of various thicknesses on thick (≅ 650 nm) thermally grown SiO2 layers on 〈111〉 Si wafers has been investigated for 290 KeV Xe irradiations over the range of Xe fluence, Φ, of 1015 to 2 × 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44fa5adb36b8833bae679f8e22fa8459
https://doi.org/10.1016/0167-5087(83)90790-1
https://doi.org/10.1016/0167-5087(83)90790-1
Autor:
I. Golecki
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 218:63-66
The power of a variable detection angle in Rutherford backscattering and channeling spectrometry is demonstrated for obtaining depth profiles of crystalline perfection in low-mass films, grown on substrates containing higher-mass, bulk elements. By u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34bbe186f344e7d1320ae19e20250242
https://doi.org/10.1016/0167-5087(83)90956-0
https://doi.org/10.1016/0167-5087(83)90956-0
Publikováno v:
Journal of Electronic Materials. 14:531-550
We demonstrate the thermal oxidation of the Si side of the interface in epitaxial Si films grown on yttria-stabilized cubic zirconia, 〈Si〉/〈YSZ〉, to form a dual-layer structure of 〈Si〉 /amorphous SiO2/〈YSZ〉. The SiO2 films are formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0950ed43ead595989a8599a1940a700
https://doi.org/10.1007/bf02654023
https://doi.org/10.1007/bf02654023