Zobrazeno 1 - 10
of 74
pro vyhledávání: '"I. Garduno"'
Autor:
Angel Sacramento, Magaly Ramirez-Como, Victor S. Balderrama, Salvador I. Garduno, Magali Estrada, Lluis F. Marsal
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 413-420 (2020)
In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport laye
Externí odkaz:
https://doaj.org/article/bc77041a622d41ec87c0145a733f1e2e
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Autor:
Lluis F. Marsal, Salvador I. Garduno, Magali Estrada, Magaly Ramirez-Como, Angel Sacramento, Victor S. Balderrama
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 413-420 (2020)
In this work, stability and degradation of inverted organic solar cells (iOSCs) partially manufactured under air environment are analyzed. The degradation of iOSCs fabricated with inkjet printed ZnO and with spin coated PFN as electron transport laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b29adee1c7675cadc83e7253ccb69c90
https://ieeexplore.ieee.org/document/8963720/
https://ieeexplore.ieee.org/document/8963720/
Publikováno v:
Microelectronic Engineering. 205:1-5
High performance, low operating voltage and low temperature processed Hf-In-Zn-O/HfO2 thin film transistors (HIZO/HfO2 TFTs), using spin-coated polymethyl-methacrylate (PMMA) as passivation and etch-stop layer (ESL), were fabricated and characterized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a039d316898cc0247fae9771d7d09de
https://doi.org/10.1016/j.mee.2018.11.008
https://doi.org/10.1016/j.mee.2018.11.008
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
In this paper we present high mobility thin film transistors, using hafnium oxide as dielectric and amorphous Hafnium-Indium-Zinc Oxide as semiconductor, both deposited by radio frequency magnetron sputtering at room temperature. Devices operated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96abfcc254d649236faac4618c6f32a
https://doi.org/10.1109/laedc51812.2021.9437929
https://doi.org/10.1109/laedc51812.2021.9437929
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
The effect of thermal annealing at low temperature (≤200°C) on some structural, optical, and electrical properties of tin (Sn) layers, deposited at room temperature by direct current magnetron sputtering in an argon and oxygen reactive plasma, was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4426debda78a1a11146090b976fd9a9d
https://doi.org/10.1109/laedc49063.2020.9073260
https://doi.org/10.1109/laedc49063.2020.9073260
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
In this work, it is described in detail the inkjet printing process for zinc oxide (ZnO) deposition in well-defined patterns, without using photolithography and etching procedures. This is achieved through the suitable control of the inkjet printer s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24911a48a70544e5ce8635e29aaa6ef
https://doi.org/10.1109/laedc49063.2020.9073472
https://doi.org/10.1109/laedc49063.2020.9073472
Publikováno v:
2020 IEEE Latin America Electron Devices Conference (LAEDC).
The electrical properties of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors fabricated with alumina (Al 2 O 3 ) as insulating layer and amorphous Hafnium-Indium-Zinc Oxide (a-HIZO) as semiconductor, are investigated. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e306f10fb80a2f1c6539c6d3c3cea61
https://doi.org/10.1109/laedc49063.2020.9073321
https://doi.org/10.1109/laedc49063.2020.9073321
Akademický článek
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