Zobrazeno 1 - 7
of 7
pro vyhledávání: '"I. G. Pichugin"'
Publikováno v:
Crystal Research and Technology. 22:65-73
The gas-phase epitaxy of AlN on saphire substrates in the system AlHClNH3–Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of AlN-layer is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3354d7da471c3e1f3761a9a3b794ee
https://doi.org/10.1002/crat.2170220117
https://doi.org/10.1002/crat.2170220117
Publikováno v:
Kristall und Technik. 12:541-545
The epitaxial growth of InN by the open tube flow method using the interaction of InCl3 and NH3 is discussed. The influence of various technological parameters on the process and structure perfection of the epitaxial layers, grown on the single cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::002d0b8dddaf898d7c9e7290dbdec7bc
https://doi.org/10.1002/crat.19770120603
https://doi.org/10.1002/crat.19770120603
Publikováno v:
Crystal Research and Technology. 17:835-840
The growth kinetics of GaN on Sapphire was analyed on the base of some experimental data such as: the growth rate temperature depandence, on the base of some experimental data such as: the growth rate temperature dependence, the grwoth rate dependenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8341b5396e37fab6dd61212823557d71
https://doi.org/10.1002/crat.2170170708
https://doi.org/10.1002/crat.2170170708
Publikováno v:
Journal of Luminescence. 35:9-16
Electroluminescence (EL) and cathodoluminescence (CL) of i-n, i-n-i and n-i-n structures on the basis of GaN epitaxial layers with the i region doped with Zn during the growth process are described. The dependence of luminescence properties on doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b8cee61feef6a67e43cd5a7c0ae039d
https://doi.org/10.1016/0022-2313(86)90003-7
https://doi.org/10.1016/0022-2313(86)90003-7
Publikováno v:
Crystal Research and Technology. 17:365-371
The results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866b82339e0360a143659d83cc3ea7cd
https://doi.org/10.1002/crat.2170170320
https://doi.org/10.1002/crat.2170170320
Publikováno v:
Physica Status Solidi (a). 38:753-760
Luminescence of GaN epitaxial layers grown by decomposition of complex gallium chloride ammonide GaCl3. NH3 in N2-ambient is discussed. Zn doping results in an intensive emission peak at (2.87 ± 0.02) eV with a halfwidth of about 0.4 eV. A correlati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e193635a64a4887b2ed5fcf69f732dbd
https://doi.org/10.1002/pssa.2210380238
https://doi.org/10.1002/pssa.2210380238
Publikováno v:
Crystal Research and Technology. 18:435-444
The role of oxygen in the process of doping GaN by Zn is established. It is shown theoretically and experimentally that Zn is dissolved in GaN in the form of complexes ZnO when oxygen or water vapour is present in the ambient of the growth reactor. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3eed1cae6598251d05e32b9a562efbc
https://doi.org/10.1002/crat.2170180403
https://doi.org/10.1002/crat.2170180403