Zobrazeno 1 - 7
of 7
pro vyhledávání: '"I. G. Neizvestny"'
Autor:
A. V. Kolyako, A. S. Pleshkov, D. B. Tretyakov, V. M. Entin, I. I. Ryabtsev, I. G. Neizvestny
Publikováno v:
SIBERIAN JOURNAL OF PHYSICS. 16:81-93
Experimental results demonstrating long-term stability of the operation of our atmospheric quantum cryptography setup using the BB84 protocol and polarization coding are presented. It was shown that the “sifted” quantum key distribution rate and
Autor:
B. I. Kidyarov, E. A. Kolosovsky, A. V. Tsarev, I. G. Neizvestny, A. L. Aseev, A. V. Latyshev, A. V. Chaplik, A. V. Dvurechenskii
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 57:539-543
Autor:
I G Neizvestny, E V Fedosenko, V A Kurbatov, T M Burbaev, S P Suprun, V N Shumsky, A. B. Talochkin
Publikováno v:
Nanotechnology. 12:437-440
For the very first time ensembles of Ge quantum dots have been formed in an unstrained heterosystem of GaAs/ZnSe/Ge. The geometric properties (dimensional characteristics) and electronic structure of the islands were studied using scanning tunnelling
Publikováno v:
AIP Conference Proceedings.
The process of Si‐Ge heterostructures formation in nanowires (NWs) grown by vapor‐liquid‐solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diamete
Publikováno v:
Russian Microelectronics; May2004, Vol. 33 Issue 3, p137-146, 10p
Publikováno v:
Physica Status Solidi (a). 101:451-462
Germanium MIS-structures with a double-layer dielectric (germanium dioxide, silicon nitride) are developed. Conditions of crack appearance in the dielectric layer are investigated. In the structures under study two kinds of cracks are observed: orien
Autor:
V. N. Ovsyuk, I. G. Neizvestny
Publikováno v:
Physica Status Solidi (a). 18:465-471
The statistics of recombination through a quasicontinuous spectrum of surface states is considered taking into account the transition between tightly placed leves. A mechanism of monotonic dependence of the surface recombination velocity on the surfa