Zobrazeno 1 - 4
of 4
pro vyhledávání: '"I. G. Melnik"'
Autor:
M. Voelskov, J. Heydenreich, D. Hoehl, J. Matthäi, A. V. Rzhanov, Peter Werner, I. G. Melnik, F. L. Edelman
Publikováno v:
physica status solidi (a). 98:383-390
Structural changes due to annealing of silicon films obtained by chemical vapor deposition in a low-pressure reactor on thermally oxidized silicon wafers are investigated using high-voltage (HVEM) and high-resolution electron microscopy (HREM). The a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c6c6ef5c1a0b1e6a1ffb6935caa4e1
https://doi.org/10.1002/pssa.2210980208
https://doi.org/10.1002/pssa.2210980208
Publikováno v:
Physica Status Solidi (a). 75:483-488
The behaviour of phosphorus implanted films of polycrystalline silicon deposited on SiO2 is studied during the annealing with pulses of a xenon lamp of 10−2 s duration. It is shown that the annealing with flash lamp pulses allows a complete activat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd572dc05e2d102dce50df5703ddedbf
https://doi.org/10.1002/pssa.2210750218
https://doi.org/10.1002/pssa.2210750218
Autor:
I. G. Melnikova
Publikováno v:
Вестник Кемеровского государственного университета, Vol 0, Iss 2-7, Pp 223-228 (2015)
The paper aims at studying the tourism attractiveness of a region as a factor of territory development. The author provides an assessment of the tourist market of the Yaroslavl region, the use of tourism potential, its state and perspectives. The met
Externí odkaz:
https://doaj.org/article/06ebc9a5266643088ba4a22362e1d23c
