Výsledky vyhledávání - "I. G. Malkina"

Evaluating psychological preparedness for the threat and impacts of climate change disasters and its change after intervention: an integrated modelling approach

Autor: Y. A. Pykh, I. G. Malkina-Pykh

Publikováno v: WIT Transactions on The Built Environment.

The aims of the present study are 1) to collect data on psychological preparedness and its psychological predictors in the sample in Novorossiysk, a city located on the Black Sea shore in Southern Russia where climate change disasters such as storm w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07d9bfdd6d4bd6a178ef16439548ee8f
https://doi.org/10.2495/dman150231

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Subjective well-being and personality: implications for wellness tourism

Autor: I. G. Malkina-Pykh, Y. A. Pykh

Publikováno v: WIT Transactions on Ecology and the Environment.

The aims of this study are to demonstrate that 1) personality differences can be considered as the mechanisms underlying differences in subjective well-being and 2) rhythmic movement therapy (RMT) can be regarded as an effective tool for increasing s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39982562d5045069fb399476c98616d0
https://doi.org/10.2495/st140051

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Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots

Autor: Yu. N. Saf'yanov, Vladimir G. Kytin, A. V. Golikov, V. A. Kulbachinskii, R. A. Lunin, I. G. Malkina, B. N. Zvonkov

Publikováno v: Physica B: Condensed Matter. 266:185-191

Transport properties and photoluminescence of InAs/GaAs structures with quantum dots on vicinal surfaces have been investigated as a function of InAs content. It was found that quantum dots form 2D hole or electron layers, for which Shubnikov–de Ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a72adb5fd85655e36e8812f21d183ed9
https://doi.org/10.1016/s0921-4526(98)01188-0

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Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy

Autor: V. Ya. Aleshkin, A. L. Chernov, B. N. Zvonkov, Yu. N. Saf'yanov, D. O. Filatov, I. G. Malkina

Publikováno v: Semiconductors. 32:1119-1124

This paper investigates the linear polarization of photoluminescence emitted along the plane of an InAs/Ga(In)As wafer. The polarization was observed to depend on the asymmetry of the quantum-well shape, quantum-dot formation, and the presence of inc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b46aa87d0b6eb90d5e070927acb1d914
https://doi.org/10.1134/1.1187541

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Low temperature transport properties of InAs/GaAs structures with quantum dots

Autor: V. A. Kulbachinskii, R. A. Lunin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, Vladimir G. Kytin

Publikováno v: Microelectronic Engineering. :107-111

The transport and optical properties of InAs/GaAs structures with quantum dots have been investigated as a function of InAs content. Photoluminescence (PL) spectra showed polarization of radiation in the plane of the structures. The temperature depen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::480a284153ee36bcc7321f473eab6f2a
https://doi.org/10.1016/s0167-9317(98)00228-7

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