Zobrazeno 1 - 9
of 9
pro vyhledávání: '"I. G. Jenkins"'
Autor:
Orlando Auciello, R. Ramesh, B. Nagaraj, Sanjeev Aggarwal, R. P. Sharma, H. Li, A. M. Dhote, Alan R. Krauss, Lourdes Salamanca-Riba, I. G. Jenkins
Publikováno v:
Acta Materialia. 48:3387-3394
The Ti-Al intermetallic material system has been investigated for application as a conducting diffusion barrier in a three-dimensional stacked capacitor-transistor geometry. La-Sr-Co-O (LSCO)/Pb-Zr-Ti-Nb-O/La-Sr-Co-O ferroelectric capacitors were fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a9f81156533a82996c2de0f65e73e5
https://doi.org/10.1016/s1359-6454(00)00148-8
https://doi.org/10.1016/s1359-6454(00)00148-8
Autor:
Ellen D. Williams, Sanjeev Aggarwal, Andrei Stanishevsky, J. Melngailis, Ramamoorthy Ramesh, C. S. Ganpule, B. Nagaraj, I. G. Jenkins
Publikováno v:
Integrated Ferroelectrics. 28:213-225
A review is presented of approaches to integrate thin film Pb(Zr, Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f3f3709b08be6b984fa0bbe99e5b95
https://doi.org/10.1080/10584580008222233
https://doi.org/10.1080/10584580008222233
Autor:
G. Velasquez, Sanjeev Aggarwal, I. G. Jenkins, R. Ramesh, B. Nagaraj, L. Boyer, J. T. Evans, C. L. Canedy
Publikováno v:
Integrated Ferroelectrics. 25:205-221
We present in this article a review of the various approaches to integrate thin film Pb(Zr, Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6514ef6dea07eaaa5644bd0b4dfe981
https://doi.org/10.1080/10584589908210173
https://doi.org/10.1080/10584589908210173
Autor:
I. G. Jenkins, Lourdes Salamanca-Riba, Valanoor Nagarajan, R. Ramesh, Sanjeev Aggarwal, S. P. Alpay, Alexander L. Roytburd, H. Li
Publikováno v:
Journal of Applied Physics. 86:595-602
We have studied the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films. We have changed the misfit strain by varying the film thickness and studied the thickness effect on the domain forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4d8fdd9e5f5b8f2f338e15c22cf711
https://doi.org/10.1063/1.370772
https://doi.org/10.1063/1.370772
Autor:
Sanjeev Aggarwal, B. Nagaraj, J. T. Evans, G. Velasquez, C. L. Canedy, R. Ramesh, L. Boyer, I. G. Jenkins, C. J. Kerr
Publikováno v:
Applied Physics Letters. 75:1787-1789
We report on ferroelectric properties of polycrystalline sol-gel derived Pb(Nb, Zr, Ti)O3 (PNZT) thin films with SrRuO3 (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850 °C. The polarization of the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f9a3127d402e4601e78569afa12e62a
https://doi.org/10.1063/1.124820
https://doi.org/10.1063/1.124820
Publikováno v:
Applied Physics Letters. 75:716-718
In this letter, we report on the influence of lead content on thin-film ferroelectric properties of lead niobium zirconate titanate. These films were prepared by the sol-gel technique and deposited on (La,Sr)CoO3 electrodes. It was determined that 7%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d929586458066da2cf9cd259c8d4e2
https://doi.org/10.1063/1.124492
https://doi.org/10.1063/1.124492
Publikováno v:
Applied Physics Letters. 72:3300-3302
We report results of high-speed polarization relaxation measurements in ferroelectric thin film capacitors. Polarization relaxation has been reported to occur in two distinct time regimes, one for relaxation times in the range of a few milliseconds a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32ba99a038c65ef38516a0026ff8302
https://doi.org/10.1063/1.121630
https://doi.org/10.1063/1.121630
Autor:
J. A. Powell, L. G. Matus, Wolfgang J. Choyke, J. B. Petit, M. Yoganathan, James H. Edgar, J. W. Yang, L. L. Clemen, I. G. Jenkins, Pirouz Pirouz
Publikováno v:
Applied Physics Letters. 59:333-335
We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H‐SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da1c77bf097ec4cb7f4ca357c70a823
https://doi.org/10.1063/1.105587
https://doi.org/10.1063/1.105587
Autor:
J. W. Yang, Wolfgang J. Choyke, J. A. Powell, M. Yoganathan, James H. Edgar, I. G. Jenkins, L. G. Matus, J. B. Petit, Pirouz Pirouz, L. L. Clemen
Publikováno v:
Applied Physics Letters. 59:183-185
Both 3C‐SiC and 6H‐SiC single‐crystal films can be grown on vicinal (0001) 6H‐SiC wafers. We have found that oxidation can be a powerful diagnostic process for (1) ‘‘color mapping’’ the 3C and 6H regions of these films, (2) decorating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa62f25589f2df6000971160a5421e1a
https://doi.org/10.1063/1.105960
https://doi.org/10.1063/1.105960