Zobrazeno 1 - 10
of 37
pro vyhledávání: '"I. G. Gorlova"'
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 85:858-862
Results are presented from studying of the structure of vacancies in TiS3 whiskers via scanning transmission electron microscopy with the registration of electrons scattered at large angles. The number of vacancies in atomic columns is measured by co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6461c1968609e25d1ff4735dcd91e50f
https://doi.org/10.3103/s1062873821080050
https://doi.org/10.3103/s1062873821080050
Autor:
V. I. Bondarenko, I. G. Gorlova, Nadezhda B. Bolotina, A. L. Vasiliev, Yu. M. Chesnokov, I. N. Trunkin
Publikováno v:
Journal of Materials Science. 56:2150-2162
A defect structure of single-crystal whiskers TiS3 with different resistivity has been studied by the high resolution scanning transmission electron microscopy. The whiskers crystallize in one monoclinic lattice, but in two variants, A and B. The hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b226e52e41ee64bc097f9963212cf58
https://doi.org/10.1007/s10853-020-05357-0
https://doi.org/10.1007/s10853-020-05357-0
Publikováno v:
JETP Letters. 110:417-423
Field-effect transistor structures based on whiskers of layered quasi-one-dimensional semiconductor TiS3 have been fabricated. The dependences of the conductivity σ on the gate voltage Vg, as well as the current-voltage characteristics of whiskers (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfcca9e9ddbd78244c7b2fa0bccdb51a
https://doi.org/10.1134/s0021364019180048
https://doi.org/10.1134/s0021364019180048
Publikováno v:
Nonlinear World.
Problem formulating. The features of linear and nonlinear conductivity, magnetic conductivity, thermopower, and the Hall effect observed on TiS3 whiskers indicate phase transitions to a state of CDW in this compound, but there is no direct evidence y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fc610ff76413411074a1aee81710036
https://doi.org/10.18127/j20700970-202102-08
https://doi.org/10.18127/j20700970-202102-08
Publikováno v:
Applied Physics Letters. 120:153102
The layered quasi one-dimensional compound TiS3 is remarkable for its optical properties, especially, photoconductivity. Up to now, photoconductivity in TiS3 was studied only at room temperature. Here, we report photoconductivity, δσ, of the TiS3 w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf4e25471ce28e034bdf3f223cc9541
https://doi.org/10.1063/5.0082716
https://doi.org/10.1063/5.0082716
Publikováno v:
JETP Letters. 107:175-181
The dependences of the resistance of the layered quasi-one-dimensional semiconductor TiS3 on the direction and magnitude of the magnetic field B have been measured. The anisotropy and angular dependences of the magnetoresistance indicate the two-dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2d493d03385ad25c06c6157da85fde2
https://doi.org/10.1134/s0021364018030074
https://doi.org/10.1134/s0021364018030074
Publikováno v:
Crystallography Reports. 61:923-930
The defect structure of TiS3 single crystals of the A-ZrSe3 type has been determined based on X-ray diffraction data. Shear defects manifest themselves as displacements of ab layers (which can imitate a twin) by ∼0.5a. Regular shears facilitate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b04624af2262077e92aaa5efa1e0e4cc
https://doi.org/10.1134/s1063774516060055
https://doi.org/10.1134/s1063774516060055
Autor:
S. G. Zybtsev, Nadezhda B. Bolotina, S. Yu. Gavrilkin, A. Yu. Tsvetkov, I. G. Gorlova, V. Ya. Pokrovskii
Publikováno v:
Physica B: Condensed Matter. 460:11-15
The current–voltage characteristics, Hall effect and magnetoresistance of TiS 3 single crystal whiskers have been studied experimentally. Below 60 K the I – V curves are non-linear along all crystallographic directions and exhibit a power law beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90081cb3071ca31632a1299d66797c7
https://doi.org/10.1016/j.physb.2014.11.030
https://doi.org/10.1016/j.physb.2014.11.030
Publikováno v:
JETP Letters. 100:256-261
Nonlinear conductance along the crystallographic axis c across the layered whiskers of the TiS3 quasi-one-dimensional semiconductor has been discovered. It has been shown that the current-voltage characteristics in all three directions along the a, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9515b64d897ab596e4173c6078503000
https://doi.org/10.1134/s0021364014160073
https://doi.org/10.1134/s0021364014160073
Autor:
I. A. Verin, Nadezhda B. Bolotina, V. Ya. Pokrovskii, S. G. Zybtsev, I. G. Gorlova, Alexander Titov
Publikováno v:
Physica B: Condensed Matter
The crystal structure and transport properties of TiS 3 whiskers in the plane of layers (ab) have been studied. Maxima of the logarithmic derivative of resistance, dln R/d(1/T), are observed at 17, 60 and 120 K both along and across the chains. Stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9ea964f3af97c59037abc92dd2eb740
https://doi.org/10.1016/j.physb.2012.01.012
https://doi.org/10.1016/j.physb.2012.01.012