Zobrazeno 1 - 10
of 82
pro vyhledávání: '"I. Fusegawa"'
Publikováno v:
Materials Science Forum. :1683-1690
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ca3923bf45a67a5dc3304ebad59e4b
https://doi.org/10.4028/www.scientific.net/msf.196-201.1683
https://doi.org/10.4028/www.scientific.net/msf.196-201.1683
Publikováno v:
Journal of Crystal Growth. 128:293-297
Oxygen precipitation occurs along growth striations in Czochralski-grown (CZ) silicon single crystal. Interstitial oxygen (Oi) striations in various CZ and horizontal magnetic field Czochralski-grown (HMCZ) silicon single crystals were studied with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d47d63ee954d649f902b5a6e2144f73
https://doi.org/10.1016/0022-0248(93)90336-u
https://doi.org/10.1016/0022-0248(93)90336-u
Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method
Publikováno v:
Materials Science Forum. :189-194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b062308d8bff3b47737b916b799db15
https://doi.org/10.4028/www.scientific.net/msf.117-118.189
https://doi.org/10.4028/www.scientific.net/msf.117-118.189
Autor:
I Fusegawa, H Yamagishi
Publikováno v:
Semiconductor Science and Technology. 7:A304-A310
Growth striations in CZ and MCZ silicon wafers were studied by the striation-etching method, spreading resistance measurements and the micro-FTIR mapping method. Microvariations in oxygen concentration were successfully measured using the micro-FTIR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4cb9fbebb28aa8ab9d9f9a8f8d20eb5
https://doi.org/10.1088/0268-1242/7/1a/058
https://doi.org/10.1088/0268-1242/7/1a/058
Publikováno v:
Semiconductor Science and Technology. 7:A135-A140
A method for revealing point defects in silicon single crystals has been investigated. D or A defects could be revealed by a preferential etching technique using Secco's etchant. Wedge-shaped flow patterns and etch pits were recognised in the D and A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cea2a8ed0d3ba964b93b5c387bdca67
https://doi.org/10.1088/0268-1242/7/1a/025
https://doi.org/10.1088/0268-1242/7/1a/025
Autor:
I. Fusegawa, Hirotoshi Yamagishi
Publikováno v:
MRS Proceedings. 262
We investigated phenomena of oxygen precipitation nonuni-formity along crystal growth axis due to different thermal histories during CZ crystal growth. The oxygen precipitation process employed in this paper was two-step thermal treatments consisting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc19372b95be7a16430756724de165d
https://doi.org/10.1557/proc-262-63
https://doi.org/10.1557/proc-262-63
Publikováno v:
MRS Proceedings. 262
We investigated the effect of D-defect in CZ silicon single crystals on the oxygen precipitation by two-step thermal treatments consisting of the first annealing in nitrogen ambient at 1073K and the second annealing in dry oxygen ambient at 1273K. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2505d4dcd4656cf58bf876486dea8769
https://doi.org/10.1557/proc-262-57
https://doi.org/10.1557/proc-262-57
Publikováno v:
MRS Proceedings. 262
We investigated phenomena of oxygen precipitation in silicon single crystals by two kinds of thermal treatment, supposing a CMOS fabrication process. The one consisted of the first annealing at 1123K for 4 hrs and the second annealing at 1423K for 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17813805fc8e19113a8e5ea35361fcf2
https://doi.org/10.1557/proc-262-683
https://doi.org/10.1557/proc-262-683
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.