Zobrazeno 1 - 10
of 20
pro vyhledávání: '"I. Eshboltaev"'
Publikováno v:
European Journal of Applied Physics. 3:51-57
The spectral dependences of the coefficients of interband three-photon optical transitions for InSb and for some optical transitions are calculated and a numerical analysis of the coefficient of interband three-photon absorption of light is carried o
Publikováno v:
Russian Physics Journal. 63:2025-2030
The linear-circular dichroism of two- and three-photon absorption of light in semiconductors of hole conductivity with cubic symmetry is theoretically investigated. The matrix elements of two- and three-photon optical transitions occurring between th
Publikováno v:
Izvestiya vysshikh uchebnykh zavedenii. Fizika. :173-178
The linear-circular dichroism of two and three photon absorption of light in semiconductors with cubic symmetry of hole conductivity is theoretically investigated. The matrix elements of two and three-photon optical transitions occurring between the
Publikováno v:
Russian Physics Journal. 62:1082-1089
The paper suggests spectral and temperature dependences of the light absorption coefficient and photon-drag effect in p-type tellurium exposed to linear polarized light. The photon momentum is considered both in the law of conservation of energy and
Publikováno v:
Russian Physics Journal. 61:463-468
The paper considers absorption of linearly polarized radiation in a semiconductor size-quantized well related to optical transitions both between the branches of light and heavy holes and between the size-quantized subbands. Main features of the ligh
Publikováno v:
Russian Physics Journal. 60:723-728
The Shift Linear Photovoltaic Effect current in a semiconductor with a camel’s back band structure caused by the current carriers’ shift in real space under direct optical transitions is calculated. The contribution of the coherent saturation of
Publikováno v:
Physics of the Solid State. 59:463-468
This paper presents a theoretical study of the linear and circular dichroism of multiphoton absorption of light in semiconductors with a complex valence band. Matrix elements of optical transitions between subbands of the valence bands of a p-GaAs se
Publikováno v:
Russian Physics Journal. 59:446-455
Publikováno v:
Russian Physics Journal. 59:92-98
The ballistic contribution to the current of linear photovoltaic effect under two-photon absorption of light is calculated and theoretically analyzed for the semiconductors of a tetrahedral symmetry with a complex band structure consisting of two clo
Publikováno v:
Russian Physics Journal. 58:1681-1686
Matrix elements of optical transitions occuring between the subbands of the valence band of a p-GaAs type semiconductor are calculated. Transitions associated with the non-simultaneous absorption of single photons and simultaneous absorption of two p