Zobrazeno 1 - 10
of 35
pro vyhledávání: '"I. E. Titkov"'
Autor:
Arndt Jaeger, Marwan Bou Sanayeh, Helmut Meinert, Manuel Härer, O. Yu. Makarov, I. E. Titkov, Nikolay Ledentsov, Nikolay N. Ledentsov
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdde6774e9dade23234ae094216a9eb4
https://doi.org/10.1117/12.2608674
https://doi.org/10.1117/12.2608674
Autor:
Alexei V. Sakharov, Andrey F. Tsatsulnikov, Thomas J. Slight, Sergey Yu. Karpov, Amit Yadav, I. E. Titkov, Andrei Gorodetsky, Edik U. Rafailov
Publikováno v:
Laser & Photonics Reviews. 10:1031-1038
The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f015516ccb2dfbe7d4d52ed8c96dfc
https://doi.org/10.1002/lpor.201600196
https://doi.org/10.1002/lpor.201600196
Autor:
W. V. Lundin, Andrey E. Nikolaev, G. S. Sokolovskii, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Amit Yadav, Edik U. Rafailov, I. E. Titkov
Publikováno v:
Applied Sciences
Volume 8
Issue 7
Applied Sciences, Vol 8, Iss 7, p 1158 (2018)
Volume 8
Issue 7
Applied Sciences, Vol 8, Iss 7, p 1158 (2018)
We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a4608840df15397ca94a98f31e27cf7
Autor:
Sergey Yu. Karpov, Edik U. Rafailov, I. E. Titkov, Denis V. Mamedov, V. L. Zerova, Amit Yadav
External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fbc591e2abd12db6775a79586022b54
https://doi.org/10.20944/preprints201709.0046.v2
https://doi.org/10.20944/preprints201709.0046.v2
Autor:
Amit Yadav, Sergey Yu. Karpov, Denis V. Mamedov, Edik U. Rafailov, V. L. Zerova, I. E. Titkov
Publikováno v:
Materials; Volume 10; Issue 11; Pages: 1323
Materials, Vol 10, Iss 11, p 1323 (2017)
Materials
Materials, Vol 10, Iss 11, p 1323 (2017)
Materials
External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e60a69610db8943e27ca8469e959e1c3
Autor:
I. E. Titkov, Amit Yadav, V. L. Zerova, Edik U. Rafailov, Ines Pietzonka, Martin Strassburg, Hans-Juergen Lugauer, Modestas Zulonas, Bastian Galler, Sergey Yu. Karpov
Publikováno v:
IEEE Journal of Quantum Electronics. 50:911-920
Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62c3d082863321e3697afdef168ed896
https://doi.org/10.1109/jqe.2014.2359958
https://doi.org/10.1109/jqe.2014.2359958
Autor:
K.K. Soboleva, I. E. Titkov, G. S. Sokolovskii, Martin Strassburg, Ines Pietzonka, Vladislav V. Dudelev, Sergey Yu. Karpov, Amit Yadav, Hans-Juergen Lugauer, Edik U. Rafailov
Publikováno v:
SPIE Proceedings.
Efficiency of commercial 620 nm InAlGaP Golden Dragon-cased high-power LEDs has been studied under extremely high pump current density up to 4.5 kA/cm2 and pulse duration from microsecond down to sub-nanosecond range. No efficiency decrease and negli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee62f09388b80ccb8bba3093b6a9ac01
https://doi.org/10.1117/12.2213344
https://doi.org/10.1117/12.2213344
Autor:
Modestas Zulonas, W. V. Lundin, A. V. Sakharov, I. E. Titkov, W. Meredith, Andrei F. Tsatsulnikov, Thomas J. Slight, Ksenia A. Fedorova, Amit Yadav, Edik U. Rafailov
Publikováno v:
SPIE Proceedings.
Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8ae0c383eed147e9f0a549a3562b065
https://doi.org/10.1117/12.2211046
https://doi.org/10.1117/12.2211046
Autor:
Vladislav V. Dudelev, Hans-Juergen Lugauer, Edik U. Rafailov, I. E. Titkov, K.K. Soboleva, Martin Strassburg, Sergey Yu. Karpov, Grigorii S. Sokolovskii, Ines Pietzonka, Amit Yadav
Publikováno v:
Journal of Applied Physics. 124:013103
In this paper, current-dependent emission spectra and efficiency measured on the same AlGaInP red light-emitting diode (LED) pumped with the current pulses of very different durations are recorded. This enabled for the first time distinguishing betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::727358cf0e1157bdb70bcbc92cfbfcd5
https://doi.org/10.1063/1.5020266
https://doi.org/10.1063/1.5020266
Publikováno v:
Journal of Modern Optics. 56:653-660
White electroluminescence (EL) from ZnO/GaN structures fabricated by pulsed laser deposition of Zn:In onto GaN:Mg/GaN structures MOCVD-grown on Al2O3 substrates has been observed. The white light is produced by superposition of two strongest emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f0a236d84f3a96e3b96e1e3c7cd918
https://doi.org/10.1080/09500340902737051
https://doi.org/10.1080/09500340902737051