Zobrazeno 1 - 10
of 51
pro vyhledávání: '"I. Dirnstorfer"'
Publikováno v:
Solid State Communications. 116:87-91
Thin CuInSe2 films on glass substrate and solar cells were processed using the ultrasound treatment technique (UST). The SIMS measurements on the films showed a strong reduction of the Na-signal after the UST, which is most likely caused by ultrasoni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb75a43d30b4af9f510c0c804ec9429f
https://doi.org/10.1016/s0038-1098(00)00276-3
https://doi.org/10.1016/s0038-1098(00)00276-3
Publikováno v:
Thin Solid Films. :504-508
CuInS2 (CIS) films of a typical thickness of 100 nm have been grown epitaxially on sulphur-terminated Si wafers of (001) and (111) orientation and on single-crystalline CaF2 substrates using three-source molecular beam epitaxy (MBE). Epitaxial growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1783e0ad978ebd4ca66bf30b743e961
https://doi.org/10.1016/s0040-6090(99)00804-4
https://doi.org/10.1016/s0040-6090(99)00804-4
Publikováno v:
Thin Solid Films. :263-267
In-rich CuInSe 2 films have been submitted to post-growth Cu diffusion. The photoluminescence investigation carried out shows a transition from the commonly observed broad band around 0.94 eV to a much sharper peak around 0.98 5 eV under low excitati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::812c40fda328c0cd2d882376153e851d
https://doi.org/10.1016/s0040-6090(99)00816-0
https://doi.org/10.1016/s0040-6090(99)00816-0
Autor:
S. Eichler, F. Karg, I. Dirnstorfer, J. Gebauer, Reinhard Krause-Rehberg, Bruno K. Meyer, F. Börner
Publikováno v:
Physica B: Condensed Matter. :930-933
Thin (∼1 μm) CuIn(Ga)Se 2 layers were grown by the rapid thermal processing technique under In-rich conditions. The as-grown samples were slightly p-type but highly compensated. They showed strong positron trapping in vacancies, indicated by a lar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50f459c1864de6d949bffe1921c17859
https://doi.org/10.1016/s0921-4526(99)00557-8
https://doi.org/10.1016/s0921-4526(99)00557-8
Publikováno v:
physica status solidi (a). 168:163-175
Cu-rich and nearly stoichiometric CuIn(Ga)Se2 thin films prepared by the rapid thermal process (RTP) are investigated by electrical and optical methods. The experiments yield that three phases are present in the layers. Cu2—xSe, which determines th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32e9fc37348a65d87725f410f9433cf5
https://doi.org/10.1002/(sici)1521-396x(199807)168:1<163::aid-pssa163>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199807)168:1<163::aid-pssa163>3.0.co
Publikováno v:
Scopus-Elsevier
GaN films were grown epitaxially on sapphire and 6H-SiC substrates by low-pressure chemical vapor deposition (LPCVD) using gallium(III) chloride and ammonia as gallium and nitrogen precursor, respectively. The properties of these samples were examine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a26442fe5ec45a5a2dfc7400a6306d69
https://doi.org/10.1016/s0022-0248(98)00285-1
https://doi.org/10.1016/s0022-0248(98)00285-1
Publikováno v:
Materials Science Forum. :1323-1326
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71164c914c3a5d7afc6f3f4fd22d345d
https://doi.org/10.4028/www.scientific.net/msf.264-268.1323
https://doi.org/10.4028/www.scientific.net/msf.264-268.1323
Publikováno v:
Materials Science Forum. :1467-1472
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aea3d7db11c9df3cd062f5982015f0f
https://doi.org/10.4028/www.scientific.net/msf.258-263.1467
https://doi.org/10.4028/www.scientific.net/msf.258-263.1467
Autor:
Jürgen Christen, G Steude, Hartmut Witte, I. Dirnstorfer, Bruno K. Meyer, W Mönch, T.U Kampen, M. Topf, D. Meister, A. Krtschil, S. Fischer
Publikováno v:
Scopus-Elsevier
We report on the optical, electrical and structural properties of GaN films heteroepitaxially grown by low pressure chemical vapor deposition on 6H-SiC substrates. We employed photoluminescence (PL), Hall effect measurements, scanning tunneling micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48dfce517b73f1133a34a4b881df2bab
https://doi.org/10.1016/s0921-5107(97)00194-3
https://doi.org/10.1016/s0921-5107(97)00194-3
Publikováno v:
MRS Proceedings. 449
We report on the heteroepitaxial growth of GaN from GaCl3 and NH3 on (0001) A12O3 and (0001) 6H-SiC substrates. In order to enable homogeneous growth within the entire deposition zone one has to use low process pressures in the 10-1 mbar range, where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1166a8c7a23812df1d9bdcf115127146
https://doi.org/10.1557/proc-449-307
https://doi.org/10.1557/proc-449-307