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Akademický článek
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Publikováno v:
STUDENTI-RICERCATORI per cinque giorni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409433591cc10df025b9c589b8d55d0b
https://doi.org/10.1007/978-88-470-5271-0
https://doi.org/10.1007/978-88-470-5271-0
Autor:
Nicola Pinto, M. De Crescenzi, Roberto Pizzoferrato, Paolo Prosposito, I. Davoli, B. Izzi, Mauro Casalboni, F. De Matteis
Publikováno v:
Physical Review B. 53:1030-1033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e0f3b9598fbc34e3c7a722bff3aa02c
https://doi.org/10.1103/physrevb.53.1030
https://doi.org/10.1103/physrevb.53.1030
Autor:
Liu M. Catena, I. Davoli
Publikováno v:
Oltre i materiali. La scienza tra le nostre dita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bd1c25afceaeca8cf306ce0e97be988
https://doi.org/10.1007/978-88-470-1762-7
https://doi.org/10.1007/978-88-470-1762-7
Autor:
Dao-xuan Dai, I Davoli
Publikováno v:
Vacuum. 44:1189-1192
X-ray photoelectron spectroscopy (XPS) measurements of core-level and valence band have been used to study the practical Pd/Si interface. Evidence of silicide, Pd 2 Si, formed by chemical reaction at this interface has been obtained. A monotonic incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5ee81c07413b3879b7397be84163ff3
https://doi.org/10.1016/0042-207x(93)90345-b
https://doi.org/10.1016/0042-207x(93)90345-b
Publikováno v:
Journal of Luminescence. 51:275-282
Some problems of cross-luminescence (fast recombination of an outermost core hole with an electron from the valence band) are discussed in this communication. The kinetics of the core hole is described with the help of a kinetic equation which includ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdeb0ad9f458fa7215e1188cae688c79
https://doi.org/10.1016/0022-2313(92)90078-n
https://doi.org/10.1016/0022-2313(92)90078-n
Autor:
F. D'Acapito, S. Colonna, S. Pascarelli, G. Antonioli, A. Balerna, A. Bazzini, F. Boscherini, F. Campolungo, G. Ghini, G. D'alba, I. Davoli, P. Fornasini, R. Graziola, G. Licheri, F. Rocca, L. Sangiorgio, V. Sciarra, V. Tullio, S. Mobilio, MENEGHINI, CARLO
Publikováno v:
ESRF newsletter 30 (1998): 42–44.
info:cnr-pdr/source/autori:F d'Acapito, S Colonna, S Pascarelli, G Antonioli, A Balerna, A Bazzini, F Boscherini, F Campolungo, G Chini, G Dalba, I Davoli, P Fornasini, R Graziola, G Licheri, C Meneghini, F Rocca, L Sangiorgio, V Sciarra, V Tullio, S Mobilio/titolo:GILDA (Italian beamline) on BM8/doi:/rivista:ESRF newsletter/anno:1998/pagina_da:42/pagina_a:44/intervallo_pagine:42–44/volume:30
info:cnr-pdr/source/autori:F d'Acapito, S Colonna, S Pascarelli, G Antonioli, A Balerna, A Bazzini, F Boscherini, F Campolungo, G Chini, G Dalba, I Davoli, P Fornasini, R Graziola, G Licheri, C Meneghini, F Rocca, L Sangiorgio, V Sciarra, V Tullio, S Mobilio/titolo:GILDA (Italian beamline) on BM8/doi:/rivista:ESRF newsletter/anno:1998/pagina_da:42/pagina_a:44/intervallo_pagine:42–44/volume:30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c949ac96cd2cf43da41637725dc40923
https://publications.cnr.it/doc/252156
https://publications.cnr.it/doc/252156
Autor:
d'Acapito, F (d'Acapito, F), Castrucci, P (Castrucci, P), Pinto, N (Pinto, N), Gunnella, R (Gunnella, R), De Crescenzi, M (De Crescenzi, M), Davoli, I (Davoli, I)
Publikováno v:
Surface science 518 (2002): 183. doi:10.1016/S0039-6028(02)02117-9
info:cnr-pdr/source/autori:d'Acapito, F (d'Acapito, F); Castrucci, P (Castrucci, P); Pinto, N (Pinto, N); Gunnella, R (Gunnella, R); De Crescenzi, M (De Crescenzi, M); Davoli, I (Davoli, I)/titolo:The effect of Sb surfactant on the growth of (GenSim)(p) layers on Si(001): a reflEXAFS study/doi:10.1016%2FS0039-6028(02)02117-9/rivista:Surface science/anno:2002/pagina_da:183/pagina_a:/intervallo_pagine:183/volume:518
info:cnr-pdr/source/autori:d'Acapito, F (d'Acapito, F); Castrucci, P (Castrucci, P); Pinto, N (Pinto, N); Gunnella, R (Gunnella, R); De Crescenzi, M (De Crescenzi, M); Davoli, I (Davoli, I)/titolo:The effect of Sb surfactant on the growth of (GenSim)(p) layers on Si(001): a reflEXAFS study/doi:10.1016%2FS0039-6028(02)02117-9/rivista:Surface science/anno:2002/pagina_da:183/pagina_a:/intervallo_pagine:183/volume:518
The effect of Sb in the growth of Ge/Si systems was studied by the total reflection extended X-ray absorption fine structure technique at the Ge K-edge. (GenSi10-n)(15) multilayers (n = 2 and 4) were grown on Si(001) substrate kept at 550 degreesC wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::af934d7c5e931a5620234b978bf6f65b
https://publications.cnr.it/doc/250871
https://publications.cnr.it/doc/250871
In this work we present the analysis of the x-ray-absorption spectra at the silicon L2,3 and K edges in amorphous SiO2 and a quartz. This analysis consists in the comparison between experimental data and several calculations based on multiple scatter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17f1d27068a4f98cd9e41742c372cd75