Zobrazeno 1 - 7
of 7
pro vyhledávání: '"I. D. Yaroshetskii"'
Autor:
S. E. Hooper, J.W. Orton, B Y Averbukh, L. C. Jenkins, I. D. Yaroshetskii, C. T. Foxon, S T Cheng, N. N. Zinov’ev, A. V. Andrianov
Publikováno v:
Semiconductor Science and Technology. 10:1117-1121
We report comprehensive photoluminescence, Raman scattering and photoluminescence excitation data on GaN layers grown by MBE on GaAs and GaP substrates. The main photoluminescence feature of GaN layers corresponds to the recombination of free carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0363d4de565ca8b63229dd52c1671686
https://doi.org/10.1088/0268-1242/10/8/011
https://doi.org/10.1088/0268-1242/10/8/011
Publikováno v:
Springer Series in Solid-State Sciences ISBN: 9783642848902
In doped semiconductors at low temperatures free excitons(FE) become bound to impurities as exciton impurity complexes (EICs) and no longer exist as separate entities. From the spectroscopic study of EIC it has been established that the energy levels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f55ccc6274fee890b65bc2b18af4bcd
https://doi.org/10.1007/978-3-642-84888-9_39
https://doi.org/10.1007/978-3-642-84888-9_39
Publikováno v:
Semiconductor Science and Technology. 10:373-374
The mechanism of formation of porous silicon under silicon anodization is discussed. A specific feature of silicon is emphasized, i.e. the ease of disproportionation of its doubly charged ions. A combination of two processes-etching of pores and seco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9afe61f405211b1c73c1bbca3bdba7
https://doi.org/10.1088/0268-1242/10/3/024
https://doi.org/10.1088/0268-1242/10/3/024
Publikováno v:
Acta Physica Hungarica. 61:103-106
We have studied surface polariton (SP) excitation in the air-metal-semiconductor system with diffraction grating (DG) at the interface and its influence on semiconductor photoresponse. It was shown that photoresponse enhanced greatly due to SP excita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2cf14dabbe437af259c09cc7cf0df15
https://doi.org/10.1007/bf03053829
https://doi.org/10.1007/bf03053829
Publikováno v:
Physica Status Solidi (b). 46:495-500
The absorption of light, Λ = 1.4 μm, has been investigated in undoped silicon at T < 30 °K under powerful laser light with hω = 1.21 eV. Under these conditions the absorption modulation pulse shows two distinct decay times with τc 0.4 μs and τ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc30b503d4aa4cdb414d3c1131ebec2
https://doi.org/10.1002/pssb.2220460205
https://doi.org/10.1002/pssb.2220460205
Publikováno v:
Physica Status Solidi (b). 53:65-70
The observation and a study of an anisotropy is reported of the photon drag hole current induced by linearly polarized CO2 laser light in p-Ge and p-InSb, which is due to the non-spherical structure of the isoenergetic surfaces in the valence band. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efb900fffb7d2b2caeead40615864e66
https://doi.org/10.1002/pssb.2220530106
https://doi.org/10.1002/pssb.2220530106
Autor:
S. M. Ryvkin, I. D. Yaroshetskii
Publikováno v:
Semiconductor Physics ISBN: 9781461578420
Semiconductor Physics
Semiconductor Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acfd0e528df23156243ca6c4c2c5887f
https://doi.org/10.1007/978-1-4615-7840-6_12
https://doi.org/10.1007/978-1-4615-7840-6_12