Zobrazeno 1 - 10 of 22 pro vyhledávání: '"I. D. Calder"'
1
Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures
Autor: John L. Freeouf, Ying-Sheng Huang, R. E. Mallard, Fred H. Pollak, I. D. Calder, W. D. Sun
Publikováno v: Applied Physics Letters. 73:214-216
We have characterized two GaInP/GaAs (001) heterojunction bipolar transistor structures, fabricated by organometallic chemical vapor deposition and chemical beam epitaxy, using contactless electroreflectance, including the dependence of the signals o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f79b5c88186dfbf5ec80021b4175608
https://doi.org/10.1063/1.121759
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2
Metalorganic vapor phase diffusion using DMZn Part II: Determination of the interstitial zinc charge state from secondary ion mass spectroscopy measurements using the Boltzmann–Matano technique
Autor: J. E. Haysom, C. Blaauw, S. Guillon, T. Bryskiewicz, N. Puetz, C. A. Hampel, R. Glew, I. D. Calder
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:916
Zinc is diffused into undoped InP epitaxial layers in a metalorganic chemical vapor deposition reactor using DMZn as a source. Using an interstitial-substitutional model, the effective diffusivity of zinc in undoped InP is expressed uniquely as a fun
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35c52d1d41d68995aea62d5978bfd60a
https://doi.org/10.1116/1.1640392
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3
Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry
Autor: S. Guillon, C. Blaauw, D. Macquistan, R. Glew, C. A. Hampel, T. Bryskiewicz, I. D. Calder
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:912
In this work we investigate metalorganic chemical vapor deposition (MOCVD) diffusion of zinc into undoped InP and InGaAs using dimethylzinc as the diffusant source. The resulting diffusion profiles are measured using secondary ion mass spectrometry.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f5bb64e44abe883ca9aa53b83e05b4e0
https://doi.org/10.1116/1.1640394
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5
Formation of shallown+pjunctions
Autor: I. D. Calder, A. A. Naem
Publikováno v: Journal of Applied Physics. 62:569-575
The effects of preamorphization and rapid thermal annealing (RTA) on the formation of shallow arsenic junctions have been investigated. Single‐crystal silicon substrates were preamorphized with a Si+ implant (3.0×1015 ions/cm2 at 60 keV) followed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2cabddeb37fd32a71dfeba11df41c960
https://doi.org/10.1063/1.339784
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6
Measurements of High-Frequency Sound Propagation inHe3-B
Autor: J. R. Owers-Bradley, Bimal K. Sarma, John B Ketterson, D. B. Mast, William P Halperin, I. D. Calder
Publikováno v: Physical Review Letters. 45:266-269
Measurements of the attenuation and velocity of pulsed high-frequency sound have been performed up to 133 MHz in superfluid $^{3}\mathrm{He}$-$B$. A new collective mode of the order parameter was discovered at a frequency extrapolated to ${T}_{c}$ of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::077e31c6b3f6c146c458e1558911ed67
https://doi.org/10.1103/physrevlett.45.266
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7
Some properties of laser annealed shallow As + implanted silicon
Autor: F. R. Shepherd, K.M. Barfoot, I. D. Calder, P.J. Scanlon, P. Skensved, J.L. Whitton
Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :342-347
Studies have been made of shallow (∼150A) As + implanted silicon, with impurity concentrations that exceed the solid solubility limit. Under CW argon laser annealing conditions we have shown that the arsenic remains in the sample even if the surfac
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b41844169a1cf5ebec3d81b20feec25
https://doi.org/10.1016/0168-583x(85)90578-6
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9
Modeling of cw laser annealing of multilayer structures
Autor: R. Sue, I. D. Calder
Publikováno v: Journal of Applied Physics. 53:7545-7550
Careful computer modeling can accurately represent the temperature distribution created during laser annealing. In this way a better understanding of the physical processes that contribute to thin film crystallization is achieved, and precise predict
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9e01103f700bc644b8d42415153116c3
https://doi.org/10.1063/1.330123
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10
Characterization of the interface between Al–1% Si and rapidly annealed Mo–polycide
Autor: R. P. Beerkens, I. D. Calder, V. Q. Ho
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:794-798
In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly‐Si. The composite layer was r
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5546fde9ddb36ee2306c998bcc1781e0
https://doi.org/10.1116/1.573817
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