Zobrazeno 1 - 10
of 109
pro vyhledávání: '"I. C. da Cunha Lima"'
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035121-035121-6 (2021)
This work is a numerical simulation of the bond percolation in an array of junctions and bifurcations mimicking a section of a graphene slab. We calculate the size distribution of graphene clusters as a filler of a polymer aiming to obtain the percol
Externí odkaz:
https://doaj.org/article/a07fce2626d44670bfc3a0b50e0138eb
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035032-035032-10 (2020)
This work uses Computational Fluid Dynamics (CFD) to simulate the two-phase flow (oil and water) through a reservoir represented by a sandbox model. We investigated the influence in the flows of water having higher and lower mobilities than oil. To a
Externí odkaz:
https://doaj.org/article/b660571c373241968c66ceb9e5927f36
Autor:
Murilo P. Almeida, Antonio Fernando Britto, A. T. da Cunha Lima, I. C. da Cunha Lima, Cláudio Soares Vivas
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035032-035032-10 (2020)
This work uses Computational Fluid Dynamics (CFD) to simulate the two-phase flow (oil and water) through a reservoir represented by a sandbox model. We investigated the influence in the flows of water having higher and lower mobilities than oil. To a
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 26:2201-2207
We investigate the spin-polarized transport of holes in GaMnAs/GaAs heterostructures with Mn concentration 5% in which a ferromagnetic order is known to exist. Disorder enters the problem both in the random distribution of Mn centers and impurities,
Publikováno v:
Journal of Magnetism and Magnetic Materials. 320:e400-e403
We describe the transport properties of a Ga 1 - y Al y As / Ga 1 - x Mn x As resonant tunneling diode (RTD). In previous works we have studied the transport of holes at the valence band (VB), considering the contacts made of GaAs:Be (p-doped). We no
Publikováno v:
Physica B: Condensed Matter. 398:389-392
In this work we present results for the transport properties of a spin polarizer consisting of a resonant tunneling diode (RTD) in which the well is made of Ga 1 - x Mn x As . This is a diluted magnetic semiconductor (DMS) of p type. The magnetizatio
Publikováno v:
Physics Letters A. 365:501-504
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic kinetic sp
Publikováno v:
Brazilian Journal of Physics, Volume: 36, Issue: 3b, Pages: 809-812, Published: SEP 2006
Brazilian Journal of Physics v.36 n.3b 2006
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics v.36 n.3b 2006
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
We study the transport properties of a spin filter consisting of a double-barrier resonant tunneling device in which the well is made of a semimagnetic material. Even if the device could be made of several materials, we discuss here the case of a Ga1
Publikováno v:
Journal of Superconductivity. 18:169-173
Wide parabolic wells can be created by properly controlling the Al content during the growth of successive Ga1−xAlxAs thin layers. Under a tilted magnetic field these systems present interesting transport properties, which are associated to their c
Autor:
Guilherme Matos Sipahi, L. M. R. Scolfaro, I. C. da Cunha Lima, J. R. Leite, S. C. P. Rodrigues
Publikováno v:
Journal of Superconductivity. 18:61-67
A self-consistent Luttinger–Kohn (LK) calculation is used to obtain the electronic structure of Mn-doped semiconductor multilayers. In the particular, case of a (In,Ga)As/GaAs heterostructure, the ternary alloy has a smaller gap than GaAs, and intr