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Akademický článek

VI Congreso Iberoamericano de Estudios Territoriales y Ambientales

Publikováno v: Investigaciones Geográficas, Vol 0, Iss 87 (2015)

Externí odkaz: https://doaj.org/article/8fa5ccc8e58144fca84e7cfdbf40e633

Interaction of the Frontotemporal Dementia-Associated Protein TMEM106B With VAMP8 in Lysosome-Autophagosome Fusion

Autor: Defne A. Amado, Alice Chen-Plotkin, Yunji Seo, Rakshita A. Charan, Maria Diaz-Ortiz, Rebecca Zack, Travis L. Unger, Johanna I. Busch, Elisia M. Clark

Publikováno v: SSRN Electronic Journal.

Frontotemporal lobar degeneration (FTLD) is a leading cause of early-onset dementia, but the pathological mechanisms underlying this disorder are not well understood. Common variants in the gene encoding Transmembrane Protein 106B (TMEM106B) increase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08d30db17f321b94a22ee5d8d824bbf7
https://doi.org/10.2139/ssrn.3877559

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Akademický článek

SDF-1α mediates wound-promoted tumor growth in a syngeneic orthotopic mouse model of breast cancer.

Autor: Christina H Stuelten, Frances N Cervoni-Curet, Johanna I Busch, Emily Sutton, Joshua D Webster, Sandra L Kavalukas, Lalage M Wakefield, Adrian Barbul, John E Niederhuber

Publikováno v: PLoS ONE, Vol 8, Iss 4, p e60919 (2013)

Increased growth of residual tumors in the proximity of acute surgical wounds has been reported; however, the mechanisms of wound-promoted tumor growth remain unknown. Here, we used a syngeneic, orthotopic mouse model of breast cancer to study mechan

Externí odkaz: https://doaj.org/article/7c1c6d7bd4d447749683e047afe47a73

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A new test specimen for the determination of the field of view of small‐area X‐ray photoelectron spectrometers

Autor: Sebastian Bütefisch, Jörg Radnik, Cristiana Passiu, Wolfgang E. S. Unger, Antonella Rossi, Thomas Weimann, I. Busch, Jörg M. Stockmann

Publikováno v: Surface and Interface Analysis, 52 (12)

Small-area/spot photoelectron spectroscopy (SAXPS) is a powerful tool for the investigation of small surface features like microstructures of electronic devices, sensors or other functional surfaces, and so forth. For evaluating the quality of such m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34a1a6c939c6b0ab19d296c975abcd11

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Akademický článek

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Non-contact, automated adjustment procedure for capacitive displacement sensors

Autor: Rudolf Meeß, Ludger Koenders, Lars Daul, I. Busch, Jin Tao, Helmut Wolff

Publikováno v: Measurement Science and Technology. 33:014004

Capacitive sensors enable non-contact displacement measurements in the micrometer range with sub-nanometer resolution. To achieve this, a proper alignment of capacitive sensors is necessary. In this work, a non-contact, automated and intrinsic adjust

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b90600016c5b585fc97b46c32fe53bc4
https://doi.org/10.1088/1361-6501/ac3028

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Application of ellipsometry for the accurate oxide layer measurement on silicon spheres

Autor: Ludger Koenders, Wende Liu, Chi Chen, I. Busch, Zhiyong Luo

Publikováno v: Applied Surface Science. 421:624-629

As one of the reference measurement methods for future realization of the unit of mass (kilogram) and Avogadro constant NA, the silicon (Si) sphere method employs the ellipsometry for the measurement of the thickness of the ultrathin (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46287cb167c3e7bfdbf98f7d242bf570
https://doi.org/10.1016/j.apsusc.2017.01.125

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Lateral Resolution of Imaging Surface-Analytical Instruments as SIMS, AES and XPS: Application of the BAM-L200 Certified Reference Material and Related ISO Standards

Autor: Wolfgang E. S. Unger, I. Busch, Sebastian Bütefisch, Thomas Wirth, Mathias Senoner

Publikováno v: Journal of Surface Analysis. 24:123-128

The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1-xAs and InxGa1 xAs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5726f80b377a9805a0a7444e4756faf6
https://doi.org/10.1384/jsa.24.123

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