Zobrazeno 1 - 10
of 376
pro vyhledávání: '"I. Broser"'
Autor:
I. Broser
Publikováno v:
Journal of Luminescence. 100:345-348
Publikováno v:
physica status solidi (b). 229:617-620
Excitonic energy transfer processes were investigated with time-resolved two-colour pump and probe spectroscopy in the ps-region. In highly compensated ZnSe epilayers, characteristic induced absorption and transmission resonances related to donor bou
Autor:
J. Holst, Axel Hoffmann, I. Broser, P. Fischer, A. Kaschner, Jürgen Christen, Frank Bertram, T. Shibata, Nobuhiko Sawaki, T. Riemann, Kazumasa Hiramatsu
Publikováno v:
Journal of Luminescence. :1192-1195
Epitaxial laterally overgrown GaN (ELOG) structures are microscopically characterized using cathodoluminescence (CL), micro-Raman spectroscopy and time-resolved micro-photoluminescence. Two ELOG samples consisting of a 3 μm thick GaN buffer layer on
Autor:
Juergen Christen, T. Riemann, Donat Josef As, J. Holst, T. Frey, Klaus Lischka, D. Schikora, Frank Bertram, D. Rudloff, Axel Hoffmann, I. Broser
Publikováno v:
physica status solidi (b). 216:471-476
Autor:
T. Frey, J. Holst, D. Schikora, Axel Hoffmann, Donat Josef As, Klaus Lischka, B. Schöttker, I. Broser
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:75-80
The epitaxial growth of zinc-blende (cubic) GaN and InGaN on GaAs with a common cleavage plane and readily high-quality, low-cost wafers may be considered as an alternative approach for the future realization of cleaved laser cavities. To obtain deta
Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism
Autor:
H. Siegle, Detlef Hommel, Sven Einfeldt, A. Kaschner, Christian Thomsen, Axel Hoffmann, I. Broser
Publikováno v:
Physical Review B. 58:13619-13626
We present a comprehensive Raman study on defects in GaN, which appear in the Raman spectra as sharp and intense lines in the low-energy region from 95 to 250 cm. These lines decrease nearly exponentially in intensity with increasing temperature and
Publikováno v:
Physical Review B. 57:9690-9694
Isotope shifts for various lines associated with excitations of transition-metal impurities in semiconductors are considered. Special attention is paid to $\mathrm{Z}\mathrm{n}\mathrm{O}:\mathrm{C}\mathrm{u},$ for which experimental results are prese
Publikováno v:
Journal of Physics: Condensed Matter. 10:2007-2019
A microscopical model is proposed, describing the origin and properties of three closely spaced zero-phonon lines observed in the green Cu band in ZnO:Cu crystals labelled and . These excitations are known to be formed by a charge-transfer reaction w
Autor:
W. Giriat, Axel Hoffmann, H.-E. Gumlich, P. Thurian, T.P. Surkova, H. Born, I. Broser, W. Busse
Publikováno v:
Journal of Crystal Growth. :1132-1136
Intra-shell d-d relaxation processes of Co 2+ centres are investigated by means of time-integrated and time-resolved photoluminescence spectroscopy. The composition dependence of the luminescence and the decay of the Co L-line in ZnCdSe and ZnSSe all
Autor:
U. W. Pohl, V. Kutzer, I. Broser, N. N. Ledentsov, Sergei Ivanov, M. Straßburg, Axel Hoffmann, Dieter Bimberg
Publikováno v:
Journal of Crystal Growth. :632-636
Exciton waveguiding was proposed to improve optical confinement of II—VI lasers. Strong resonant exciton absorption induces a refractive index enhancement (*n) on the low-energy side of the absorption peak. By stacking sheets of submonolayer (SML)