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pro vyhledávání: '"I. Boerasu"'
Akademický článek
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Autor:
C. Mihailescu, V. Leca, R. Birjega, Maria Dinescu, I. Boerasu, Florin Andrei, Valentin Ion, Antoniu Moldovan, N. Scarisoreanu
Publikováno v:
Applied Physics A. 125
The physical properties of perovskite oxides are strongly influenced by their stoichiometry and one of the key features of these materials is the tunability of their functionality by controlling the interplay between the compositional and structural
Akademický článek
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Publikováno v:
Vacuum. 82:1379-1382
Using ceramic targets prepared by conventional way, based on the composition Pb 0.995 (Zr 0.65 Ti 0.35 ) 0.99 Nb 0.01 O 3 + 4% mole PbO excess (PZTN), several ferroelectric films were deposited by pulsed laser ablation (PLA) technique on Pt (111) coa
Publikováno v:
Thin Solid Films. 515:6557-6561
The sol–gel deposition method has been successfully applied to obtain Pb(Zr0.2Ti0.8)O3 thin films on platinized silicon wafers. Addition of different amounts (7–15 wt.%) of organic macromolecular polyvinylpyrrolidone in the precursor solution pri
Publikováno v:
Sensors and Actuators A: Physical. 115:185-190
Pyroelectric current spectroscopy (PCS) was used to investigate the homogeneity of the Nb doped lead zirconate–titanate Pb(Zr 0.92 Ti 0.08 )O 3 , (PZT) ceramics intended to be used in the infrared (IR) pyroelectric detectors manufacturing. The non-
Publikováno v:
Materials Science and Engineering: B. 109:174-177
Pb(Zr, Ti)O3 (PZT) thin films with Zr/Ti ratio of 92/8 and doped with up to 4 at.% Nb were deposited by sol–gel on Pt coated Si substrates. The scope was to investigate the influence of Nb additive on the structural, optical and electrical properti
Publikováno v:
Integrated Ferroelectrics. 62:83-87
Lead zirconate-titanate (PZT) thin films with Zr/Ti ratio of 92/8 were deposited by sol-gel on Pt(111)-coated Si(100) and single crystal MgO(100) substrates. The films crystallize differently on the two type of substrates: in case of the films deposi
Publikováno v:
Journal of Applied Physics. 93:9961-9967
The abnormal polarization offset observed in case of graded ferroelectric structures is explained assuming the presence of a nonreversible part of polarization due to the imposed polarization gradient. It is shown that an upper limit for the offset s
Publikováno v:
Ferroelectrics (Online) 293 (2003): 135–146. doi:10.1016/S0167-577X(00)00266-4
info:cnr-pdr/source/autori:Pereira M., Boerasu I., Gomes M.J.M., Watts B.E., Leccabue F./titolo:Electric properties of PZTN (65%2F35%2Fx) thin films deposited by sol-gel/doi:10.1016%2FS0167-577X(00)00266-4/rivista:Ferroelectrics (Online)/anno:2003/pagina_da:135/pagina_a:146/intervallo_pagine:135–146/volume:293
info:cnr-pdr/source/autori:Pereira M., Boerasu I., Gomes M.J.M., Watts B.E., Leccabue F./titolo:Electric properties of PZTN (65%2F35%2Fx) thin films deposited by sol-gel/doi:10.1016%2FS0167-577X(00)00266-4/rivista:Ferroelectrics (Online)/anno:2003/pagina_da:135/pagina_a:146/intervallo_pagine:135–146/volume:293
Ferroelectric thin films based on PZT (65/35) and PZTN (65/35/4) were prepared by the chemical solution deposition using alkoxide precursors. The existence of the perovskite phase was confirmed in each film, with a strong degree of [111] orientation.