Zobrazeno 1 - 10
of 36
pro vyhledávání: '"I. Blech"'
Publikováno v:
IEEE Transactions on Electron Devices. 37:159-167
An amorphous silicon layer, confined between metal and single-crystalline silicon, is created by the implantation of ions at high dose into silicon wafers followed by deposition of a metal film. The initial resistance of this structure is very high a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2ef63e185e3ad4e064b06b403b838c
https://doi.org/10.1109/16.43813
https://doi.org/10.1109/16.43813
Publikováno v:
Journal of Applied Physics. 53:4202-4207
The stresses of thermally grown as well as chemically vapor deposited (CVD) silicon dioxide were measured by the cantilever beam technique using x‐ray diffraction. Thermally grown oxide shows reversible stress changes upon heating or cooling of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d5b364b002b2e63274ed72094ea281f
https://doi.org/10.1063/1.331244
https://doi.org/10.1063/1.331244
Publikováno v:
Thin Solid Films. 176:131-142
The effect of amorphizing the surface of (100) silicon substrate on the stability of the microstructure and the composition of Al(2% Cu)Ti/WSi contacts under heat treatments, in N2 gas ambient, at temperatures between 450 and 520 °C was studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cca790352b10f35ceaf2b20f07fb158
https://doi.org/10.1016/0040-6090(89)90370-2
https://doi.org/10.1016/0040-6090(89)90370-2
Publikováno v:
Philosophical Magazine. 24:683-693
Vapour-grown platelet crystals of ZnS containing long-period polytypes have been found by x-ray topography to contain a single screw dislocation with a very large Burgers vector parallel to the c axis. Individual polytype regions can have highly perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1052f2b14fa528d5046a4bf5a97f7f
https://doi.org/10.1080/14786437108217039
https://doi.org/10.1080/14786437108217039
Publikováno v:
IEEE Electron Device Letters. 10:180-182
The programmable element consists of a metal/amorphous-silicon/crystalline-silicon structure in which the amorphous-silicon layer is created by high-dose ion implantation. Amorphization by the damage caused by the collisions of the energetic ions wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbba82e4feedea845fbc198668730e2
https://doi.org/10.1109/55.31713
https://doi.org/10.1109/55.31713
Publikováno v:
The Selected Works of John W. Cahn
We have observed a metallic solid (Al-14-at.%-Mn) with long-range orientational order, but with icosahedral point group symmetry, which is inconsistent with lattice translations. Its diffraction spots are as sharp as those of crystals but cannot be i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1073895c6b406f775a78300ed0e319
https://doi.org/10.1103/physrevlett.53.1951
https://doi.org/10.1103/physrevlett.53.1951
Publikováno v:
IEEE Journal of Solid-State Circuits. 24:839-841
A method for programming and characterizing electrically programmable elements of the antifuse type (i.e normally open) is described. The programming conditions are controlled by two transistors which isolate the programmable element (PEL) from the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5f86551e072a917240ce4e6fc19560
https://doi.org/10.1109/4.32048
https://doi.org/10.1109/4.32048
Publikováno v:
1987 International Electron Devices Meeting.
A novel Ion-Implanted Programmable Element (IPEL) suitable for integration with VLSI technology has been developed. The device operation is based on the electrical properties of a metal/amorphous silicon/single crystal silicon structure made by heavy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e0f8f5d0f710fab2d65c30b139f8ecc
https://doi.org/10.1109/iedm.1987.191385
https://doi.org/10.1109/iedm.1987.191385
Publikováno v:
Thin Solid Films. 48:L19-L20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d7948fdbad5203969f0d542f1ca10aa
https://doi.org/10.1016/0040-6090(78)90004-4
https://doi.org/10.1016/0040-6090(78)90004-4