Zobrazeno 1 - 10
of 11
pro vyhledávání: '"I. Beers"'
Autor:
I. Beers, John Ebner, C. Haynes, S. Diamond, G. Pubanz, S. Park, B. Vetanen, Agoston Agoston, S.J. Prasad, S. Sanielevici
Publikováno v:
Microelectronic Engineering. 19:413-416
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::272eb39a949a992a4151b515a43fa29d
https://doi.org/10.1016/0167-9317(92)90465-4
https://doi.org/10.1016/0167-9317(92)90465-4
Autor:
G. Pubanz, S. Park, S. Diamond, S.J. Prasad, I. Beers, Agoston Agoston, S. Sanielevici, C. Haynes, John Ebner, B. Vetanen
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
A non-self-aligned HBT (heterojunction bipolar transistor) IC process with f/sub T/ and f/sub max/ of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322625a554ff0f668c1b66a92d788ba2
https://doi.org/10.1109/gaas.1991.172649
https://doi.org/10.1109/gaas.1991.172649
Publikováno v:
[1991] GaAs IC Symposium Technical Digest.
A description is presented of the DC and microwave testing required for the development of an HBT (heterojunction bipolar transistor) integrated circuit process. Process control monitoring structures have been designed to allow device testing at seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50710a2f39a51c0b604803c2ef0c028d
https://doi.org/10.1109/gaas.1991.172667
https://doi.org/10.1109/gaas.1991.172667
Autor:
I. Beers, Agoston Agoston, C. Haynes, B. Vetanen, S. Sanielevici, S. Diamond, G. Pubanz, S. Park, John Ebner, S.J. Prasad
Publikováno v:
Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
A non-self-aligned HBT (heterojunction bipolar transistor) process capable of 45 GHz f/sub T/ and f/sub max/ with 1.4-THz Schottky diodes is reported. An HBT divide-by-eight prescalar circuit clocks at 13.5 GHz and a pulser circuit using Schottky dio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6172e165f22a89541fa3ac5b4136211
https://doi.org/10.1109/bipol.1991.160961
https://doi.org/10.1109/bipol.1991.160961
Publikováno v:
Electronics Letters. 28:2341-2343
High gain (β = 175) 3 × 10 & μm2 GaInP &GaAs HBTs fabricated using a triple mesa etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 μA. Microwave measurements indicate the devices h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc89a00507961668ff0d5c12d3879ca
https://doi.org/10.1049/el:19921509
https://doi.org/10.1049/el:19921509
Autor:
I. Beers, B. Vetanen, G. Pubanz, S. Park, S. Jayasimha Prasad, S. Sanielevici, C. Haynes, S. Diamond, Agoston Agoston, John Ebner
Publikováno v:
High-Speed Electronics and Optoelectronics.
B.Vetanen, C.Haynes, SPark, I.Beers,S.Diamond, GPubanz, J.Ebrier, SSanielevici and A.AgostonElectronics Research Labs, MS 50-223, Tektronix, Beaverton, OR 97077.ABSTRACTA high-performance A1GaAs/GaAs HBT IC technology capable of45GHzfr andf is descri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d6422aee2c535740c24e5b849f38c6
https://doi.org/10.1117/12.137709
https://doi.org/10.1117/12.137709
Publikováno v:
Electronics Letters. 29:320
A fully integrated GaInP/GaAs HBT IC process with Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors is presented. The HBTs have an fT and fmax of 60 and 45 GHz, respectively. Unloaded ECL gate delays of 28 ps are obtained f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7524eaa3134117dbe8e355d95676be4
https://doi.org/10.1049/el:19930218
https://doi.org/10.1049/el:19930218
Autor:
J. H. Karr, M. I. Beers
Publikováno v:
Electrical Engineering. 63:172-174
INTEREST in d-c machines in many phases of the war effort prompts the writers to present a method of design which has been found to be very useful and time saving. The method makes use of fundamental relationships in somewhat different forms and appr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1609245d648d68825bd5a28c65a4503d
https://doi.org/10.1109/ee.1944.6440236
https://doi.org/10.1109/ee.1944.6440236
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be42c61267b3d34b917e4c31453e0a72
https://doi.org/10.4271/610476
https://doi.org/10.4271/610476
Publikováno v:
Journal for Research in Mathematics Education. 8:155-156
It is evident that there is a lack of agreement about heuristics or the heuristic method. Kulm deplores the lack of a clear or consistent meaning of heuristic but does not attempt a definition or working description. This lack of definition appears t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c85198a01c4fbee06eb78f5c7d17b956
https://doi.org/10.5951/jresematheduc.8.2.0155
https://doi.org/10.5951/jresematheduc.8.2.0155