Výsledky vyhledávání - "I. A. Trapeznikova"

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ($${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol %)

Autor: I. N. Trapeznikova, E. I. Terukov, Yu. K. Undalov

Publikováno v: Semiconductors. 53:1514-1523

The formation of ncl-Si in the amorphous matrix a-SiOx:H using a time-modulated DC plasma at an elevated oxygen content of $${{C}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol % in a gas mixture of (SiH4–Ar–O2) is investigated. Plasma modulation implies t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eda1965aed1418753b8941ca73be2604
https://doi.org/10.1134/s1063782619110228

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Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass

Autor: S. N. Abolmasov, I. S. Shakhray, E. I. Terukov, A. S. Abramov, A. V. Semenov, I. N. Trapeznikova, E. V. Malchukova

Publikováno v: Semiconductors. 53:1114-1119

Attenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c1babda7e93d0aa2484b5b7a8ce516b4
https://doi.org/10.1134/s1063782619080244

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An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions

Autor: V. I. Ivanov-Omskii, D. A. Andryushchenko, V. S. Varavin, K. D. Mynbaev, V. G. Remesnik, S. A. Dvoretskii, I. N. Trapeznikova, N. L. Bazhenov, M. V. Yakushev, Nikolay N. Mikhailov

Publikováno v: Technical Physics Letters. 45:553-556

The disordering in cadmium mercury telluride solid solution films grown by molecular beam epitaxy on Si and GaAs substrates has been examined by optical transmission and photoluminescence investigations. The effect of a fundamental decrease in the di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbe77369b02c6023e1b8020595468085
https://doi.org/10.1134/s1063785019060099

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Optical Properties and Kinetics of the Luminescence Decay of Sm3+ and Sm2+ Ions in Aluminoborosilicate Glasses

Autor: I. N. Trapeznikova, E. I. Terukov, E. V. Malchukova, Bruno Boizot

Publikováno v: Bulletin of the Russian Academy of Sciences: Physics. 83:277-281

Multicomponent borosilicate glasses containing 0.5–5 wt % of Sm2O3 are synthesized via high-temperature melting in air. Samples are irradiated in a van de Graaff accelerator at 2.5 MeV. The kinetics of the decay of luminescence of Sm3+ and Sm2+ ion

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9faa7a87d220e786c7842f084d0bf83e
https://doi.org/10.3103/s1062873819030158

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Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( $${{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}$$ = 15.5 mol %)

Autor: Yu. K. Undalov, I. N. Trapeznikova, E. I. Terukov

Publikováno v: Semiconductors. 52:1255-1263

The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a-SiOx:H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescence spectra. DC-plasma modulation consi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71ab9c113a0d3ecc700b4c863336b742
https://doi.org/10.1134/s1063782618100214

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Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

Autor: I. N. Trapeznikova, V. N. Petrov, Andrey N. Aleshin, I. P. Shcherbakov

Publikováno v: Physics of the Solid State. 59:2486-2490

Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62bea1104e882170fc78d8179cf71047
https://doi.org/10.1134/s1063783417120034

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Surface texture of single-crystal silicon oxidized under a thin V2O5 layer

Autor: V. N. Verbitskiy, S. E. Nikitin, A. V. Bobyl, A. V. Nashchekin, I. N. Trapeznikova, E. E. Terukova

Publikováno v: Semiconductors. 51:104-109

The process of surface texturing of single-crystal silicon oxidized under a V2O5 layer is studied. Intense silicon oxidation at the Si–V2O5 interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an ox

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b1c447142708a8e6d8a991f1e49fd22
https://doi.org/10.1134/s106378261701016x

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