Zobrazeno 1 - 10
of 202
pro vyhledávání: '"I. A. Sheremet"'
Autor:
I. A. Sheremet
Publikováno v:
Вестник Московского Университета. Серия XXV: Международные отношения и мировая политика, Vol 11, Iss 1, Pp 3-19 (2020)
Strategic documents of the Russian Federation consider opportunities created by digital economy as one of the key factors capable of ensuring economic growth and national sovereignty as well as of stimulating production in all spheres of social and e
Externí odkaz:
https://doaj.org/article/d03e130feab44d75b12252e5aa9c18df
Autor:
Rf, Moscow, Russian Federation, Cryptosoft, Penza, Russian Federation, I. A. Sheremet, A. V. Korolkov, F. K. Aliev, Rfbr, Moscow, Russian Federation, E. A. Matveev
Publikováno v:
Programmnaya Ingeneria. 12:179-188
The quantum cryptographic system AKM2017 is considered. The results of the analysis of the dependence of the degree of difference between the encryption and decryption gamut on the degree of difference between the corresponding session keys are prese
Publikováno v:
Russian Journal of Earth Sciences. 18:1-17
Autor:
I. A. Sheremet, M. V. Virko, P. N. Vorontsov-Velyaminov, Vladislav Voronenkov, Yu. G. Shreter, Ruslan Gorbunov, Natalia Bochkareva, V. S. Kogotkov, Andrey Leonidov
Publikováno v:
Semiconductors. 51:1186-1193
A study of the current and capacitance dependences on the forward voltage in Au/n-GaN Schottky diodes, the sub-band optical absorption spectra, and the defect photoluminescence in n-GaN bulk crystals and thin layers is reported. It is shown that defe
Autor:
I. A. Sheremet, D. V. Tarkhin, V. Y. Davydov, Alexander N. Smirnov, Y. G. Shreter, N. I. Bochkareva, Andrey Leonidov, Y. S. Lelikov, M. V. Virko, F. E. Latishev, Andrey Zubrilov, Vladislav Voronenkov, A. V. Pinchuk, V. S. Kogotkov, R. I. Gorbunov
Publikováno v:
Semiconductors. 51:115-121
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the
Publikováno v:
Semiconductors. 50:1369-1376
Point defects in GaN and, in particular, their manifestation in the photoluminescence, optical absorption, and recombination current in light-emitting diodes with InGaN/GaN quantum wells are analyzed. The results of this analysis demonstrate that the
Autor:
Chen, Qingxia1 (AUTHOR), Song, Yingjie2 (AUTHOR) yjsong0517@163.com, An, Yuxing2 (AUTHOR) yjsong0517@163.com, Lu, Yinglin2 (AUTHOR), Zhong, Guohua1 (AUTHOR)
Publikováno v:
Diversity (14242818). Dec2024, Vol. 16 Issue 12, p734. 26p.
Autor:
Rashad, A. M.1 (AUTHOR), Kolsi, Lioua2 (AUTHOR), Mansour, M. A.3 (AUTHOR), Salah, T.4 (AUTHOR), Mir, Ahmed5 (AUTHOR), Armaghani, Taher6 (AUTHOR) armaghani.taher@yahoo.com, Alshammari, Badr M.7 (AUTHOR)
Publikováno v:
Frontiers in Chemistry. 2024, p1-20. 20p.
Autor:
I. A. Sheremet
Publikováno v:
Cybernetics and Systems Analysis. 28:356-367
The problem of efficient coding of sentences in stochastic context-free languages is considered. A grammatical interpretation of the problem is proposed, in which coding and decoding are treated as processes of word generation and word analysis.
Publikováno v:
Physics, Chemistry and Application of Nanostructures.