Zobrazeno 1 - 5
of 5
pro vyhledávání: '"I. A. Panaev"'
Autor:
S A Studenikin, Klaus Ensslin, A V Chaplik, Gian Salis, I A Panaev, Arthur C. Gossard, K. D. Maranowski
Publikováno v:
Semiconductor Science and Technology. 14:604-610
Classical magnetotransport coefficients were studied in a parabolic quantum well (PQW) structure with two subbands occupied which occupancies were determined using the Shubnikov - de Haas effect. Unexpectedly, a very low magnetoresistivity effect was
Autor:
S A Studenikin, I A Panaev, C. M. Thrush, V. A. Tkachenko, Dale L. Partin, Donald T. Morelli, O A Tkachenko, Joseph P. Heremans
Publikováno v:
Semiconductor Science and Technology. 11:1857-1862
Transport properties of Si--doped InSb grown by molecular beam epitaxy are studied. The mobility spectrum (MS) analysis made over a wide temperature range reveals three species of carriers: those associated with the bulk of the film, and electrons in
Publikováno v:
Journal of Physics: Condensed Matter. 7:1101-1110
Results are presented of a theoretical and experimental investigation of the dynamic conductivity in the microwave region of a two-dimensional lateral-surface superlattice. A theoretical analysis based on the solution of the Boltzmann kinetic equatio
Publikováno v:
Semiconductor Science and Technology. 8:1822-1828
The transport properties of delta -GaAs (Si) at high temperatures were studied using the 'mobility spectrum' technique. Strong changes in the subband occupancies were observed in a low-doped sample (ND=1.5*1012 cm-2) as the temperature increased from
Autor:
I A Panaev, S A Studenikin
Publikováno v:
Semiconductor Science and Technology. 8:1324-1330
It is shown that photoconductivity (PC) of thin epitaxial CdxHg1-xTe/CdTe layers in the stationary crossed fields has a complicated non-monotonic behaviour as a function of magnetic field. The analytical expressions for PC and the photoelectromagneti