Zobrazeno 1 - 10 of 16 pro vyhledávání: '"I. A. Nasibov"'
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Akademický článek
The new program of stimulation of economy of China
Autor: I. A. Nasibov
Publikováno v: Vestnik MGIMO-Universiteta, Vol 0, Iss 6(27), Pp 122-124 (2012)
Not only have the effects of the global financial and economic crisis provoked the slowdown in economic growth in China. A Chinese government policy was also aimed at cooling the economy to remove the existing socio-economic imbalances. As a result o
Externí odkaz: https://doaj.org/article/9659d28403f74d27bbfe529c96ccf613
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4
Uncooled PEM detector of the CO2-laser radiation
Autor: E. K. Huseynov, T. I. Ibragimov, N. D. Ismailov, I. A. Nasibov, A. A. Aliyev
Publikováno v: SPIE Proceedings.
Uncooled photoelectromagnetic detectors (PEM-detector) on the basis of cadmium - mercury telluride solid solutions of composition x 2 -laser radiation with wave-length of 10.6 μM. [1] To advantages of such detectors it is possible to attribute absen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89ebbae148b2c180a709b6e7cbeae1f2
https://doi.org/10.1117/12.742332
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5
HgCdTe based PEM detector for middle range of IR spectrum
Autor: T. I. Ibragimov, E. K. Huseynov, I. A. Nasibov, F. N. Gaziyev
Publikováno v: SPIE Proceedings.
The calculation of dependence photoelectric parameters of the uncooled photoelectromagnetic (PEM) detector of infrared range of spectrum on the basis of monocrystals CdxHg1-xTe (x=0,2) from the level of an acceptor doping of semiconductor material wa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ab0caa542240ee2fe2ecbe62aaeb9e2
https://doi.org/10.1117/12.628871
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6
Multichannel infrared imager
Autor: E. K. Huseynov, A. K. Mamedov, A. A. Aliyev, I. A. Nasibov, V. M. Salmanov, Sh. O. Eminov
Publikováno v: SPIE Proceedings.
The principle of construction of the multi-channel IR-CCD on the basis of vary-gap semiconductor have been considered. On an example of HgTe-CdTe solid solutions is shown, that grown epitaxial layers repeats of substrate form at using semiconductor s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b7e633cd41f458fee8d99334fb3e9af
https://doi.org/10.1117/12.407722
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